Engineering the speedup of quantum tunneling in Josephson systems via dissipation

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2022
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Ankerhold, Joachim
Andergassen, Sabine
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We theoretically investigate the escape rate occurring via quantum tunneling in a system affected by tailored dissipation. Specifically, we study the environmental assisted quantum tunneling of the superconducting phase in a current-biased Josephson junction. We consider Ohmic resistors inducing dissipation both in the phase and in the charge of the quantum circuit. We find that the charge dissipation leads to an enhancement of the quantum escape rate. This effect appears already in the low Ohmic regime and also occurs in the presence of phase dissipation that favors localization. Inserting realistic circuit parameters, we address the question of its experimental observability and discuss suitable parameter spaces for the observation of the enhanced rate.

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530 Physik
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Josephson effect, Mesoscopics, tunneling & traversal time, Josephson junctions, path-integral methods
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ISO 690MAILE, Dominik, Joachim ANKERHOLD, Sabine ANDERGASSEN, Wolfgang BELZIG, Gianluca RASTELLI, 2022. Engineering the speedup of quantum tunneling in Josephson systems via dissipation. In: Physical Review B. American Physical Society (APS). 2022, 106, 045408. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.106.045408
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@article{Maile2022-03-16T15:56:29ZEngin-58154,
  year={2022},
  doi={10.1103/PhysRevB.106.045408},
  title={Engineering the speedup of quantum tunneling in Josephson systems via dissipation},
  volume={106},
  issn={2469-9950},
  journal={Physical Review B},
  author={Maile, Dominik and Ankerhold, Joachim and Andergassen, Sabine and Belzig, Wolfgang and Rastelli, Gianluca},
  note={Article Number: 045408}
}
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    <dcterms:abstract xml:lang="eng">We theoretically investigate the escape rate occurring via quantum tunneling in a system affected by tailored dissipation. Specifically, we study the environmental assisted quantum tunneling of the superconducting phase in a current-biased Josephson junction. We consider Ohmic resistors inducing dissipation both in the phase and in the charge of the quantum circuit. We find that the charge dissipation leads to an enhancement of the quantum escape rate. This effect appears already in the low Ohmic regime and also occurs in the presence of phase dissipation that favors localization. Inserting realistic circuit parameters, we address the question of its experimental observability and discuss suitable parameter spaces for the observation of the enhanced rate.</dcterms:abstract>
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