Ultrafast carrier recombination in highly n-doped Ge-on-Si films

Kurzanzeige
dc.contributor.authorAllerbeck, Jonas
dc.contributor.authorHerbst, Andreas J.
dc.contributor.authorYamamoto, Yuji
dc.contributor.authorCapellini, Giovanni
dc.contributor.authorVirgilio, Michele
dc.contributor.authorBrida, Daniele
dc.date.accessioned2019-07-10T13:17:13Z
dc.date.available2019-07-10T13:17:13Z
dc.date.issued2019-06-17eng
dc.description.abstractWe study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 1019 cm-3 range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1063/1.5088012eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/46314
dc.language.isoengeng
dc.subject.ddc530eng
dc.titleUltrafast carrier recombination in highly n-doped Ge-on-Si filmseng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Allerbeck2019-06-17Ultra-46314,
  year={2019},
  doi={10.1063/1.5088012},
  title={Ultrafast carrier recombination in highly n-doped Ge-on-Si films},
  number={24},
  volume={114},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Allerbeck, Jonas and Herbst, Andreas J. and Yamamoto, Yuji and Capellini, Giovanni and Virgilio, Michele and Brida, Daniele},
  note={Article Number: 241104}
}
kops.citation.iso690ALLERBECK, Jonas, Andreas J. HERBST, Yuji YAMAMOTO, Giovanni CAPELLINI, Michele VIRGILIO, Daniele BRIDA, 2019. Ultrafast carrier recombination in highly n-doped Ge-on-Si films. In: Applied Physics Letters. 2019, 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012deu
kops.citation.iso690ALLERBECK, Jonas, Andreas J. HERBST, Yuji YAMAMOTO, Giovanni CAPELLINI, Michele VIRGILIO, Daniele BRIDA, 2019. Ultrafast carrier recombination in highly n-doped Ge-on-Si films. In: Applied Physics Letters. 2019, 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/46314">
    <dc:creator>Brida, Daniele</dc:creator>
    <dc:contributor>Virgilio, Michele</dc:contributor>
    <dc:contributor>Brida, Daniele</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/46314"/>
    <dc:creator>Capellini, Giovanni</dc:creator>
    <dcterms:title>Ultrafast carrier recombination in highly n-doped Ge-on-Si films</dcterms:title>
    <dc:creator>Allerbeck, Jonas</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-10T13:17:13Z</dc:date>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-10T13:17:13Z</dcterms:available>
    <dc:contributor>Yamamoto, Yuji</dc:contributor>
    <dc:contributor>Allerbeck, Jonas</dc:contributor>
    <dc:creator>Virgilio, Michele</dc:creator>
    <dc:creator>Yamamoto, Yuji</dc:creator>
    <dc:contributor>Herbst, Andreas J.</dc:contributor>
    <dcterms:abstract xml:lang="eng">We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 10&lt;sup&gt;19&lt;/sup&gt; cm&lt;sup&gt;-3&lt;/sup&gt; range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.</dcterms:abstract>
    <dcterms:issued>2019-06-17</dcterms:issued>
    <dc:creator>Herbst, Andreas J.</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Capellini, Giovanni</dc:contributor>
  </rdf:Description>
</rdf:RDF>
kops.flag.isPeerReviewedtrueeng
kops.flag.knbibliographytrue
kops.sourcefieldApplied Physics Letters. 2019, <b>114</b>(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012deu
kops.sourcefield.plainApplied Physics Letters. 2019, 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012deu
kops.sourcefield.plainApplied Physics Letters. 2019, 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012eng
relation.isAuthorOfPublication08170808-678e-47d3-9c5b-bf626d833004
relation.isAuthorOfPublicationfb7077d2-f6d7-4280-95ec-72602d8b2e81
relation.isAuthorOfPublication63c3b6eb-7f27-469e-a922-6c95152d9dbf
relation.isAuthorOfPublication.latestForDiscovery08170808-678e-47d3-9c5b-bf626d833004
source.bibliographicInfo.articleNumber241104eng
source.bibliographicInfo.issue24eng
source.bibliographicInfo.volume114eng
source.identifier.eissn1077-3118eng
source.identifier.issn0003-6951eng
source.periodicalTitleApplied Physics Letterseng

Dateien

Sammlungen

Physik: Publikationen