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Ultrafast carrier recombination in highly n-doped Ge-on-Si films

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2019

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Yamamoto, Yuji
Capellini, Giovanni
Virgilio, Michele

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https://doi.org/10.1063/1.5088012
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Applied Physics Letters. 2019, 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012

Zusammenfassung

We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 1019 cm-3 range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions.

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ISO 690ALLERBECK, Jonas, Andreas J. HERBST, Yuji YAMAMOTO, Giovanni CAPELLINI, Michele VIRGILIO, Daniele BRIDA, 2019. Ultrafast carrier recombination in highly n-doped Ge-on-Si films. In: Applied Physics Letters. 2019, 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012
BibTex
@article{Allerbeck2019-06-17Ultra-46314,
  year={2019},
  doi={10.1063/1.5088012},
  title={Ultrafast carrier recombination in highly n-doped Ge-on-Si films},
  number={24},
  volume={114},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Allerbeck, Jonas and Herbst, Andreas J. and Yamamoto, Yuji and Capellini, Giovanni and Virgilio, Michele and Brida, Daniele},
  note={Article Number: 241104}
}
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