Publikation: Electron Conductivity on Helium Films
Dateien
Datum
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Publikationsstatus
Erschienen in
Zusammenfassung
Electrons on liquid helium films form a two-dimensional (2D) array with a wide range of electron density. This system is also very interesting for applications in restricted geometry. The conductivity σ of the electron arrays, however, strongly depends on the thickness d of the helium films adsorbed above solid substrates. This behaviour of σ is discussed in detail for a randomly rough substrate. It turns out that for the dependence of the conductivity σ(d) there exist three regions of helium thicknesses: d > dmin, d ∼ dmin, and d < dmin. Here dmin is the helium film thickness which corresponds to a relatively deep minimum of the 2D conductivity. In the first interval, d > dmin, a two-fraction scenario determines the behaviour of σ(d). In the vicinity of dmin percolation phenomena develop and the conductivity exhibits different types of the so-called dip effect. For even thinner helium films, i.e., when d < dmin, an activation type of mobility is stimulated. The presented model fits quite well to existing data of ac and dc electron mobility.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
Schlagwörter
Konferenz
Rezension
Zitieren
ISO 690
KLIER, Jürgen, Irena DOICESCU, Paul LEIDERER, Valeri SHIKIN, 2008. Electron Conductivity on Helium Films. In: Journal of Low Temperature Physics. 2008, 150(3/4), pp. 212-223. ISSN 0022-2291. eISSN 1573-7357. Available under: doi: 10.1007/s10909-007-9537-0BibTex
@article{Klier2008Elect-5357, year={2008}, doi={10.1007/s10909-007-9537-0}, title={Electron Conductivity on Helium Films}, number={3/4}, volume={150}, issn={0022-2291}, journal={Journal of Low Temperature Physics}, pages={212--223}, author={Klier, Jürgen and Doicescu, Irena and Leiderer, Paul and Shikin, Valeri} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/5357"> <dcterms:bibliographicCitation>First publ. in: Journal of Low Temperature Physics, 150 (2008), 3/4, pp. 212 223</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5357"/> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dcterms:title>Electron Conductivity on Helium Films</dcterms:title> <dc:language>eng</dc:language> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:55:13Z</dc:date> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5357/1/paper_375_JLowTemp_Klier2008.pdf"/> <dc:rights>terms-of-use</dc:rights> <dc:contributor>Doicescu, Irena</dc:contributor> <dc:creator>Doicescu, Irena</dc:creator> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5357/1/paper_375_JLowTemp_Klier2008.pdf"/> <dc:contributor>Klier, Jürgen</dc:contributor> <dc:format>application/pdf</dc:format> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Shikin, Valeri</dc:contributor> <dcterms:abstract xml:lang="eng">Electrons on liquid helium films form a two-dimensional (2D) array with a wide range of electron density. This system is also very interesting for applications in restricted geometry. The conductivity σ of the electron arrays, however, strongly depends on the thickness d of the helium films adsorbed above solid substrates. This behaviour of σ is discussed in detail for a randomly rough substrate. It turns out that for the dependence of the conductivity σ(d) there exist three regions of helium thicknesses: d > dmin, d ∼ dmin, and d < dmin. Here dmin is the helium film thickness which corresponds to a relatively deep minimum of the 2D conductivity. In the first interval, d > dmin, a two-fraction scenario determines the behaviour of σ(d). In the vicinity of dmin percolation phenomena develop and the conductivity exhibits different types of the so-called dip effect. For even thinner helium films, i.e., when d < dmin, an activation type of mobility is stimulated. The presented model fits quite well to existing data of ac and dc electron mobility.</dcterms:abstract> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:55:13Z</dcterms:available> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:contributor>Leiderer, Paul</dc:contributor> <dc:creator>Leiderer, Paul</dc:creator> <dc:creator>Klier, Jürgen</dc:creator> <dc:creator>Shikin, Valeri</dc:creator> <dcterms:issued>2008</dcterms:issued> </rdf:Description> </rdf:RDF>