Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films

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2021
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Mittmann, Terence
Alex, Hsain
Istrate, Marian Cosmin
Lomenzo, Patrick D.
Baumgarten, Lutz
Jones, Jacob L.
Pintilie, Lucian
Schroeder, Uwe
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physica status solidi (RRL) – Rapid Research Letters. Wiley. 2021, 15(5), 2100012. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.202100012
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Thin film metal–ferroelectric–metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O2, and N2 annealing atmospheres significantly change the ferroelectric performance. The use of oxygen‐deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake‐up effect. It is found that oxygen‐rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.

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ISO 690MITTMANN, Terence, Thomas SZYJKA, Hsain ALEX, Marian Cosmin ISTRATE, Patrick D. LOMENZO, Lutz BAUMGARTEN, Martina MÜLLER, Jacob L. JONES, Lucian PINTILIE, Uwe SCHROEDER, 2021. Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films. In: physica status solidi (RRL) – Rapid Research Letters. Wiley. 2021, 15(5), 2100012. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.202100012
BibTex
@article{Mittmann2021-05Impac-53530,
  year={2021},
  doi={10.1002/pssr.202100012},
  title={Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films},
  number={5},
  volume={15},
  issn={1862-6254},
  journal={physica status solidi (RRL) – Rapid Research Letters},
  author={Mittmann, Terence and Szyjka, Thomas and Alex, Hsain and Istrate, Marian Cosmin and Lomenzo, Patrick D. and Baumgarten, Lutz and Müller, Martina and Jones, Jacob L. and Pintilie, Lucian and Schroeder, Uwe},
  note={Article Number: 2100012}
}
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    <dcterms:abstract xml:lang="eng">Thin film metal–ferroelectric–metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O&lt;sub&gt;2&lt;/sub&gt;, and N&lt;sub&gt;2&lt;/sub&gt; annealing atmospheres significantly change the ferroelectric performance. The use of oxygen‐deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake‐up effect. It is found that oxygen‐rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.</dcterms:abstract>
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