Mode shape and dispersion relation of bending waves in thin silicon membranes

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2012
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Physical Review B. 2012, 85(3). ISSN 1098-0121. Available under: doi: 10.1103/PhysRevB.85.035324
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We study the vibrational behavior of silicon membranes with a thickness of a few hundred nanometers and macroscopic lateral size. A piezo is used to couple in transverse vibrations, which we monitor with a phase-shift interferometer using stroboscopic light. The observed wave pattern of the membrane deflection is a superposition of the mode corresponding to the excitation frequency and several higher harmonics. Using a Fourier transformation in time, we separate these contributions and image up to the eighth harmonic of the excitation frequency. With this method we determine the dispersion relation of membrane oscillations in a frequency range up to 12 MHz. We develop a simple analytical model combining stress of a membrane and bending of a thin plate that describes both the experimental data and finite-elements simulations very well. We derive correction terms to account for a finite curvature of the membrane and for the inertia of the surrounding atmosphere. A simple criterion for the transition between stressed membrane and thin plate behavior is presented.

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ISO 690WAITZ, Reimar, Stephan NÖSSNER, Michael HERTKORN, Olivier SCHECKER, Elke SCHEER, 2012. Mode shape and dispersion relation of bending waves in thin silicon membranes. In: Physical Review B. 2012, 85(3). ISSN 1098-0121. Available under: doi: 10.1103/PhysRevB.85.035324
BibTex
@article{Waitz2012shape-18291,
  year={2012},
  doi={10.1103/PhysRevB.85.035324},
  title={Mode shape and dispersion relation of bending waves in thin silicon membranes},
  number={3},
  volume={85},
  issn={1098-0121},
  journal={Physical Review B},
  author={Waitz, Reimar and Nößner, Stephan and Hertkorn, Michael and Schecker, Olivier and Scheer, Elke}
}
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