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High-Resolution Valley Spectroscopy of Si Quantum Dots

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2017

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Mi, Xiao
Petta, Jason R.

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https://doi.org/10.1103/PhysRevLett.119.176803
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http://arxiv.org/abs/1704.06312

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Physical Review Letters. 2017, 119(17), 176803. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.119.176803

Zusammenfassung

We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intra-valley tunnel couplings.

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ISO 690MI, Xiao, Csaba G. PÉTERFALVI, Guido BURKARD, Jason R. PETTA, 2017. High-Resolution Valley Spectroscopy of Si Quantum Dots. In: Physical Review Letters. 2017, 119(17), 176803. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.119.176803
BibTex
@article{Mi2017-04-20T19:28:49ZHighR-40879,
  year={2017},
  doi={10.1103/PhysRevLett.119.176803},
  title={High-Resolution Valley Spectroscopy of Si Quantum Dots},
  number={17},
  volume={119},
  issn={0031-9007},
  journal={Physical Review Letters},
  author={Mi, Xiao and Péterfalvi, Csaba G. and Burkard, Guido and Petta, Jason R.},
  note={Article Number: 176803}
}
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