Publikation: Investigation of acceptors in p-type WS2 by standard and photo-assisted scanning tunneling microscopy/spectroscopy
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Current imaging tunneling spectroscopy (CITS) and photo-assisted scanning tunneling spectroscopy (STS) is used to characterize dopants in p-type WS, single crystals. While the local charge distribution at ionized acceptor sites give rise to topographic depressions on a nm scale, CITS measurements reveal an additional bright ring. On the base of a one dimensional metal-insulator-semiconductor (MIS) model, the topographic contrast and the ring structure are explained by two competing current mechanisms involving tunneling into unoccupied states of the valence and the conduction band. Local surface photovoltage (LSPV) imaging allows to directly measure the local potential. We observe a nonoscillating reduction of the tip-induced bandbending in the vicinity of the acceptors and correlate this with the lateral extension of the topographic depressions and the ring structures observed in CITS measurements. In addition, photoinduced tunneling current (PITC) measurements do not show an enhanced minority charge carrier recombination at acceptor sites.
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SOMMERHALTER, Christof, Thomas W. MATTHES, Johannes BONEBERG, Martha Christina LUX-STEINER, Paul LEIDERER, 1999. Investigation of acceptors in p-type WS2 by standard and photo-assisted scanning tunneling microscopy/spectroscopy. In: Applied Surface Science. 1999, 144-145, pp. 564-569. Available under: doi: 10.1016/S0169-4332(98)00866-6BibTex
@article{Sommerhalter1999Inves-4679, year={1999}, doi={10.1016/S0169-4332(98)00866-6}, title={Investigation of acceptors in p-type WS2 by standard and photo-assisted scanning tunneling microscopy/spectroscopy}, volume={144-145}, journal={Applied Surface Science}, pages={564--569}, author={Sommerhalter, Christof and Matthes, Thomas W. and Boneberg, Johannes and Lux-Steiner, Martha Christina and Leiderer, Paul} }
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