Publikation:

Rashba Effect in the Graphene/Ni(111) System

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PRL100_107602_2008.pdf
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2008

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Laubschat, Clemens

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-54965
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https://doi.org/10.1103/PhysRevLett.100.107602
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Physical Review Letters. 2008, 100, 107602. Available under: doi: 10.1103/PhysRevLett.100.107602

Zusammenfassung

We report on angle-resolved photoemission studies of the electronic pi states of high-quality epitaxial graphene layers on a Ni(111) surface. In this system the electron binding energy of the pi states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinarily large energy shift up to 225 meVof the graphene-derived pi band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction between spin-polarized electrons in the pi band and the large effective electric field at the graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphenebased spintronic devices.

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ISO 690DEDKOV, Yuriy S., Mikhail FONIN, Ulrich RÜDIGER, Clemens LAUBSCHAT, 2008. Rashba Effect in the Graphene/Ni(111) System. In: Physical Review Letters. 2008, 100, 107602. Available under: doi: 10.1103/PhysRevLett.100.107602
BibTex
@article{Dedkov2008Rashb-4835,
  year={2008},
  doi={10.1103/PhysRevLett.100.107602},
  title={Rashba Effect in the Graphene/Ni(111) System},
  volume={100},
  journal={Physical Review Letters},
  author={Dedkov, Yuriy S. and Fonin, Mikhail and Rüdiger, Ulrich and Laubschat, Clemens},
  note={Article Number: 107602}
}
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