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GD-OES depth profiling and calibration of B doped dielectric layers

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2019

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-18jp4bq5zklib2
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https://doi.org/10.1063/1.5123808
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POORTMANS, Jef, ed. and others. SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics. Melville, New York: AIP Publishing, 2019, 020003. AIP Conference Proceedings. 2147,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123808

Zusammenfassung

Doped Si-based glasses such as boron silicate glass have a variety of applications in photovoltaics. A well suited, fast method for analysing the elemental composition of these layers is glow discharge optical emission spectroscopy. In addition to qualitative depth profiling, quantitative analysis is of special interest. This requires a calibration in the relevant concentration range, which cannot be achieved by certified commercial standards and therefore requires laboratory standards. In context of calibration, the influence of the substrate surface on the depth profile is investigated. It is found that calibration is not unambiguously possible with a rough surface. Optical effects can be identified and a layer system consisting of a SiNx:H interface layer is used, which was optimized by simulating reflection on interfaces using the transfer matrix method so that calibration is possible using such laboratory standards.

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530 Physik

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SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr. 2019 - 10. Apr. 2019, Leuven, Belgium
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ISO 690GEML, Fabian, Josh ENGELHARDT, Jonathan STEFFENS, Luis-Frieder REINALTER, Gabriel MICARD, Giso HAHN, 2019. GD-OES depth profiling and calibration of B doped dielectric layers. SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, 8. Apr. 2019 - 10. Apr. 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics. Melville, New York: AIP Publishing, 2019, 020003. AIP Conference Proceedings. 2147,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123808
BibTex
@inproceedings{Geml2019GDOES-50356,
  year={2019},
  doi={10.1063/1.5123808},
  title={GD-OES depth profiling and calibration of B doped dielectric layers},
  number={2147,1},
  isbn={978-0-7354-1892-9},
  issn={0094-243X},
  publisher={AIP Publishing},
  address={Melville, New York},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics},
  editor={Poortmans, Jef},
  author={Geml, Fabian and Engelhardt, Josh and Steffens, Jonathan and Reinalter, Luis-Frieder and Micard, Gabriel and Hahn, Giso},
  note={Article Number: 020003}
}
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