Publikation: Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon
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Hydrogen in-diffusion into highly boron-doped crystalline silicon from a remote hydrogen plasma with and without illumination (excess carrier injection) is investigated in the temperature range 60-200°C by means of ECV relying on the deactivation of acceptors by formation of acceptor-hydrogen pairs. Diffusivity is analyzed via the Boltzmann-Matano approach. Effective diffusivity of hydrogen under the investigated conditions is found to be strongly trap-limited. Furthermore, it is found that illumination has a decelerating influence on the effective diffusivity of hydrogen probably due to the enhancement or suppression of diffusion of differently charged hydrogen species by the electric field of the high-low junction formed by the passivation of boron in the diffused region.
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KELLER, Philipp, Axel HERGUTH, 2018. Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 130009. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 0094-243X. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049328BibTex
@inproceedings{Keller2018Inves-46512, year={2018}, doi={10.1063/1.5049328}, title={Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon}, number={1999,1}, isbn={978-0-7354-1715-1}, issn={0094-243X}, publisher={AIP Publishing}, address={Melville, NY}, series={AIP Conference Proceedings}, booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics}, editor={Ballif, Christophe}, author={Keller, Philipp and Herguth, Axel}, note={Article Number: 130009} }
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