Publikation: Measurement Back-Action in Stacked Graphene Quantum Dots
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We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher-order quantum mechanical back-action mechanisms.
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BISCHOFF, Dominik, Marius EICH, Oded ZILBERBERG, Clemens RÖSSLER, Thomas IHN, Klaus ENSSLIN, 2015. Measurement Back-Action in Stacked Graphene Quantum Dots. In: Nano Letters. American Chemical Society (ACS). 2015, 15(9), pp. 6003-6008. ISSN 1530-6984. eISSN 1530-6992. Available under: doi: 10.1021/acs.nanolett.5b02167BibTex
@article{Bischoff2015-09-09Measu-54936, year={2015}, doi={10.1021/acs.nanolett.5b02167}, title={Measurement Back-Action in Stacked Graphene Quantum Dots}, number={9}, volume={15}, issn={1530-6984}, journal={Nano Letters}, pages={6003--6008}, author={Bischoff, Dominik and Eich, Marius and Zilberberg, Oded and Rössler, Clemens and Ihn, Thomas and Ensslin, Klaus} }
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