Publikation: Voltage-Induced Rearrangements in Atomic-Size Contacts
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We study voltage-induced conductance changes of Pb, Au, Al, Cu atomic contacts. The experiments are performed in vacuum at low temperature using mechanically controllable break junctions. We determine switching histograms, i.e. distribution functions of switching voltages and switching currents, as function of the conductance. We observe a clear material dependence: Au reveals the highest and almost conductanceindependent switching voltage, while Al has the lowest with a pronounced dependence on the conductance. The theoretical study uses density functional theory and a generalized Langevin equation considering the pumping of particular phonon modes. We identify a runaway voltage as the threshold at which the pumping destabilizes the atomic arrangement. We nd qualitative agreement between the average switching voltage and the runaway voltage regarding the material and conductance dependence and contact-to-contact variation of the average characteristic voltages, suggesting that the phonon pumping is a relevant mechanism driving the rearrangements in the experimental contacts.
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RING, Markus, David WEBER, Patrick HAIBER, Fabian PAULY, Peter NIELABA, Elke SCHEER, 2020. Voltage-Induced Rearrangements in Atomic-Size Contacts. In: Nano letters. American Chemical Society (ACS). 2020, 20(8), pp. 5773-5778. ISSN 1530-6984. eISSN 1530-6992. Available under: doi: 10.1021/acs.nanolett.0c01597BibTex
@article{Ring2020-08-12Volta-50151, year={2020}, doi={10.1021/acs.nanolett.0c01597}, title={Voltage-Induced Rearrangements in Atomic-Size Contacts}, number={8}, volume={20}, issn={1530-6984}, journal={Nano letters}, pages={5773--5778}, author={Ring, Markus and Weber, David and Haiber, Patrick and Pauly, Fabian and Nielaba, Peter and Scheer, Elke} }
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