Publikation: Temperature-dependent magnetoresistance of magnetic tunnel junctions with ultraviolet light-assisted oxidized barriers
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Co(10 nm)/AlOx(nominally 2 nm)/Co(20 nm) tunnel junctions have been prepared under ultrahigh vacuum conditions applying a shadow mask technique. An ultraviolet light-assisted oxidation process of the AlOx barrier has been optimized by in situ x-ray photoelectron spectroscopy, in conjunction with temperature-dependent tunneling magnetoresistance measurements. Optimum-oxidized tunnel junctions show a magnetoresistance of 20% at 285 K, and up to 38% at 100 K. For under-oxidized samples, with a remaining Al layer between the Co bottom electrode and the AlOx barrier, the tunneling magnetoresistance decreases more rapidly with increasing temperature than observed for the over-oxidized samples. The resistance × area product of optimum-oxidized tunneling junctions exhibits a minimum, and increases for under- and over-oxidized samples.
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MAY, Ulrich, K. SAMM, Harish KITTUR, Jan O. HAUCH, Raffaella CALARCO, Ulrich RÜDIGER, Gernot GÜNTHERODT, 2001. Temperature-dependent magnetoresistance of magnetic tunnel junctions with ultraviolet light-assisted oxidized barriers. In: Applied Physics Letters. 2001, 78(14), pp. 2026-2028. Available under: doi: 10.1063/1.1361098BibTex
@article{May2001Tempe-8873, year={2001}, doi={10.1063/1.1361098}, title={Temperature-dependent magnetoresistance of magnetic tunnel junctions with ultraviolet light-assisted oxidized barriers}, number={14}, volume={78}, journal={Applied Physics Letters}, pages={2026--2028}, author={May, Ulrich and Samm, K. and Kittur, Harish and Hauch, Jan O. and Calarco, Raffaella and Rüdiger, Ulrich and Güntherodt, Gernot} }
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