Influence of the dopant on the contact formation to p+-type silicon

Abstract

In this contribution we investigate the influence of the doping element on the contact formation to p+-type Si. Contacting B doped layers with Ag thick film paste leads to very few Ag crystallites at the contact interface and results in poor contact resistances [1] R. Lago, L. Pérez, H. Kerp, I. Freire, I. Hoces and N. Azkona, Screen printing metallization of boron emitters. Prog Photovolt Res Appl, 18 (2010), pp. 20–27. | View Record in Scopus | | Full Text via CrossRef[1], [2] and [3]. Using Ag/Al thick film paste for contact formation, the contact is not only formed by Ag crystallites, but by diversely shaped Ag/Al contact spots and the contact resistance is reduced by more than one order of magnitude [2]. Al melting at the Si wafer surface forms Al doped rectangles on the Si wafer where the growth of Ag/Al/Pb spikes is enhanced.When contacting Al doped layers with Ag thick film paste a larger number of Ag crystallites is observed than for B doped layers. If the contact is formed with Ag/Al paste the number of Al-rich rectangles is enhanced and we detect higher doped areas under the contact spots. The contacts detected have an ellipsoidal, pyramidal or “L-formed” shape. We conclude that not only the acceptor impurity concentration under the contact area is crucial for the contact formation, but also the properties of the specific acceptor present.