Exploiting optical near fields for phase change memories

Abstract

We apply a recently developed technique based on optical near fields to achieve reversible phase switching in Ge2Sb2Te5 films. By placing dielectric microspheres at the film surface and exposing them to pulsed laser light, a complex intensity distribution due to the optical near field can be created at the film surface. We demonstrate writing and erasing operations of patterns through phase switching. Spheres can be removed after an operation by optical near fields without ablation. Data erasure is achieved with and without near fields. The erasure method used can be determined from the result and erased information can be retrieved although being inverted. Three distinct material states are identified within patterns, showing clear contrast and sharp borders between them, thus opening the possibility of three-level data storage. Our results suggest that optical near fields are a promising candidate for developing strategies in data storage, encryption, and multiplexing.