Publikation: Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon
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2011
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Dreher, Lukas
Hilker, Timon A.
Brandlmaier, Andreas
Huebl, Hans
Stutzmann, Martin
Brandt, Martin S.
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Physical Review Letters. American Physical Society (APS). 2011, 106(3), 037601. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.106.037601
Zusammenfassung
We demonstrate an electroelastic control of the hyperfine interaction between nuclear and electronic spins opening an alternative way to address and couple spin-based qubits. The hyperfine interaction is measured by electrically detected magnetic resonance in phosphorus-doped silicon epitaxial layers employing a hybrid structure consisting of a silicon-germanium virtual substrate and a piezoelectric actuator. By applying a voltage to the actuator, the hyperfine interaction is changed by up to 0.9 MHz, which would be enough to shift the phosphorus donor electron spin out of resonance by more than one linewidth in isotopically purified 28Si.
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DREHER, Lukas, Timon A. HILKER, Andreas BRANDLMAIER, Sebastian T. B. GOENNENWEIN, Hans HUEBL, Martin STUTZMANN, Martin S. BRANDT, 2011. Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon. In: Physical Review Letters. American Physical Society (APS). 2011, 106(3), 037601. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.106.037601BibTex
@article{Dreher2011-01-21Elect-52610,
year={2011},
doi={10.1103/PhysRevLett.106.037601},
title={Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon},
number={3},
volume={106},
issn={0031-9007},
journal={Physical Review Letters},
author={Dreher, Lukas and Hilker, Timon A. and Brandlmaier, Andreas and Goennenwein, Sebastian T. B. and Huebl, Hans and Stutzmann, Martin and Brandt, Martin S.},
note={Article Number: 037601}
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