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Hydrothermally Grown TiO2 Nanorod Array Memristors with Volatile States

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2020

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ACS applied materials & interfaces. American Chemical Society. 2020, 12(20), pp. 23363-23369. ISSN 1944-8244. eISSN 1944-8252. Available under: doi: 10.1021/acsami.0c05164

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In the present study, the memristive characteristics of hydrothermally grown TiO2 nanorod arrays, particularly, the difference in the retention-time of the resistance state are investigated in dependence of the array growth temperature. A volatile behavior is observed and related to a redistribution of oxygen vacancies over time. It is shown, that the retention time increases for increasing array growth temperatures from several seconds up to 20 minutes. The relaxation behavior is also seen in the current-voltage characteristics, which do not show the common unipolar, bipolar, or complementary switching behavior. Instead, the temporal evolution depends on the duration of the applied voltage and on the nanowire growth temperature. Therefore, electronic measurements are combined with scanning electron and scanning transmission electron microscopy, so that the amount of oxygen defect-rich grain boundaries in the upper part of the nanowires can be linked to the differences in the current-voltage behavior and retention time.

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530 Physik

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memristor, TiO2 nanorod array, resistive switching, long-term state, oxygen diffusion, current decay, retention time

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ISO 690EBENHOCH, Carola, Julian KALB, Joohyun LIM, Tobias SEEWALD, Christina SCHEU, Lukas SCHMIDT-MENDE, 2020. Hydrothermally Grown TiO2 Nanorod Array Memristors with Volatile States. In: ACS applied materials & interfaces. American Chemical Society. 2020, 12(20), pp. 23363-23369. ISSN 1944-8244. eISSN 1944-8252. Available under: doi: 10.1021/acsami.0c05164
BibTex
@article{Ebenhoch2020-05-20Hydro-49410,
  year={2020},
  doi={10.1021/acsami.0c05164},
  title={Hydrothermally Grown TiO<sub>2 </sub>Nanorod Array Memristors with Volatile States},
  number={20},
  volume={12},
  issn={1944-8244},
  journal={ACS applied materials & interfaces},
  pages={23363--23369},
  author={Ebenhoch, Carola and Kalb, Julian and Lim, Joohyun and Seewald, Tobias and Scheu, Christina and Schmidt-Mende, Lukas}
}
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