Publikation: Femtosecond pump-probe spectroscopy of intersubband relaxation dynamics in narrow InGaAs/AlAsSb quantum well structures
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Intersubband relaxation dynamics in InGaAs/AlAsSb multiquantum wells (QWs) is studied by single-color femtosecond pump-probe measurements. At early delay times, all samples show an exponential decay of the transient transmission occurring with time constants of the order of a picosecond. The relaxation dynamics at later delay times strongly depend on both QW thickness and doping location. A non-single-exponential decay behavior indicates extra competing relaxation channels, as further confirmed by solving three-level rate equations. It is shown that slowly decaying components are due to electron transfer to states related to indirect valleys in the wells or in the barriers.
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TRIBUZY, Christiana Villas-Bôas, Sabine OHSER, Stephan WINNERL, Jörg GRENZER, Harald SCHNEIDER, Manfred HELM, Jörg NEUHAUS, Thomas DEKORSY, Klaus BIERMANN, Harald KÜNZEL, 2006. Femtosecond pump-probe spectroscopy of intersubband relaxation dynamics in narrow InGaAs/AlAsSb quantum well structures. In: Applied Physics Letters. 2006, 89, 171104. Available under: doi: 10.1063/1.2360242BibTex
@article{Tribuzy2006Femto-8917,
year={2006},
doi={10.1063/1.2360242},
title={Femtosecond pump-probe spectroscopy of intersubband relaxation dynamics in narrow InGaAs/AlAsSb quantum well structures},
volume={89},
journal={Applied Physics Letters},
author={Tribuzy, Christiana Villas-Bôas and Ohser, Sabine and Winnerl, Stephan and Grenzer, Jörg and Schneider, Harald and Helm, Manfred and Neuhaus, Jörg and Dekorsy, Thomas and Biermann, Klaus and Künzel, Harald},
note={Article Number: 171104}
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<dcterms:abstract xml:lang="eng">Intersubband relaxation dynamics in InGaAs/AlAsSb multiquantum wells (QWs) is studied by single-color femtosecond pump-probe measurements. At early delay times, all samples show an exponential decay of the transient transmission occurring with time constants of the order of a picosecond. The relaxation dynamics at later delay times strongly depend on both QW thickness and doping location. A non-single-exponential decay behavior indicates extra competing relaxation channels, as further confirmed by solving three-level rate equations. It is shown that slowly decaying components are due to electron transfer to states related to indirect valleys in the wells or in the barriers.</dcterms:abstract>
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