Publikation: Bulk hydrogenation in mc-Si by PECVD SiNx deposition only
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Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult.
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HERZOG, Bernhard, Bernd RAABE, Giso HAHN, 2007. Bulk hydrogenation in mc-Si by PECVD SiNx deposition only. EU PVSEC. Milan, Italy, 3. Sept. 2007 - 7. Sept. 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725BibTex
@inproceedings{Herzog2007hydro-872, year={2007}, title={Bulk hydrogenation in mc-Si by PECVD SiN<sub>x</sub> deposition only}, publisher={WIP-Renewable Energies}, address={München}, booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007}, pages={1722--1725}, author={Herzog, Bernhard and Raabe, Bernd and Hahn, Giso} }
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