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Bulk hydrogenation in mc-Si by PECVD SiNx deposition only

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Herzog_opus-121371.pdf
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2007

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The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725

Zusammenfassung

Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult.

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530 Physik

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Bulk hydrogenation, PECVD-SiN, mc-Si

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EU PVSEC, 3. Sept. 2007 - 7. Sept. 2007, Milan, Italy
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ISO 690HERZOG, Bernhard, Bernd RAABE, Giso HAHN, 2007. Bulk hydrogenation in mc-Si by PECVD SiNx deposition only. EU PVSEC. Milan, Italy, 3. Sept. 2007 - 7. Sept. 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725
BibTex
@inproceedings{Herzog2007hydro-872,
  year={2007},
  title={Bulk hydrogenation in mc-Si by PECVD SiN<sub>x</sub> deposition only},
  publisher={WIP-Renewable Energies},
  address={München},
  booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007},
  pages={1722--1725},
  author={Herzog, Bernhard and Raabe, Bernd and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/872">
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:38Z</dcterms:available>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:language>eng</dc:language>
    <dcterms:title>Bulk hydrogenation in mc-Si by PECVD SiN&lt;sub&gt;x&lt;/sub&gt; deposition only</dcterms:title>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Herzog, Bernhard</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/872/1/Herzog_opus-121371.pdf"/>
    <dc:contributor>Raabe, Bernd</dc:contributor>
    <dcterms:bibliographicCitation>The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1722-1725</dcterms:bibliographicCitation>
    <dc:rights>terms-of-use</dc:rights>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/872"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:51:38Z</dc:date>
    <dcterms:abstract xml:lang="eng">Recent publications have studied the bulk hydrogenation of mc-Si by PECVD SiNx deposition after a high temperature firing step. Our investigation focuses on the effect of bulk hydrogenation in mc-Si via PECVD SiNx deposition at low temperatures without a subsequent firing step. Tests were performed on p-type String Ribbon wafers, p-type EFG Ribbon wafers and n-type and p-type wafers from mc-Si ingots. Adjacent and neighbouring wafers respectively are used to compare bulk lifetimes after single and double sided SiNx deposition on wafers as grown and after P-gettering. Bulk lifetime was measured spatially resolved with μ-PCD. Surface passivation was done with an iodine-ethanol solution. The bulk hydrogenation effect is detectable for PECVD SiNx deposition only, without additional firing step, but varies for different mc-Si materials. The effect is stronger in H-sensitive materials, however, a general statement for all mc-Si materials is difficult.</dcterms:abstract>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:issued>2007</dcterms:issued>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Raabe, Bernd</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/872/1/Herzog_opus-121371.pdf"/>
    <dc:contributor>Herzog, Bernhard</dc:contributor>
  </rdf:Description>
</rdf:RDF>

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