Publikation: Correlation of stress in silicon nitride layers with their complete removal by laser ablation
Lade...
Dateien
Datum
2013
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Gold
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Energy Procedia. 2013, 38, pp. 707-712. ISSN 1876-6102. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2013.07.336
Zusammenfassung
In recent years laser ablation of dielectric layers for local structuring of solar cell passivation layers has become more and more common. Apart from adjusting laser parameters for a damage-free removal of dielectric layers, it is necessary to prepare the surface in a way suitable for the respective contact methods (screen printing, nickel plating, etc.). In this study, we demonstrate for silicon nitride layers how the deposition parameters and deposition method correlate to the characteristics of the ablated area. Furthermore a simple method to predict these characteristics is introduced based on the determination of the intrinsic stress in the dielectric layer. A correlation between compressively stressed or stress-free silicon nitride layers and a complete ablation was found.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
ablation, laser, stress, silicon nitride
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
ENGELHARDT, Josh, Sybille OHL, Giso HAHN, Barbara TERHEIDEN, 2013. Correlation of stress in silicon nitride layers with their complete removal by laser ablation. In: Energy Procedia. 2013, 38, pp. 707-712. ISSN 1876-6102. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2013.07.336BibTex
@article{Engelhardt2013Corre-25024,
year={2013},
doi={10.1016/j.egypro.2013.07.336},
title={Correlation of stress in silicon nitride layers with their complete removal by laser ablation},
volume={38},
issn={1876-6102},
journal={Energy Procedia},
pages={707--712},
author={Engelhardt, Josh and Ohl, Sybille and Hahn, Giso and Terheiden, Barbara}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/25024">
<dc:creator>Ohl, Sybille</dc:creator>
<dcterms:issued>2013</dcterms:issued>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/25024/2/Engelhardt_250241.pdf"/>
<dc:creator>Engelhardt, Josh</dc:creator>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dc:rights>Attribution-NonCommercial-NoDerivs 3.0 Unported</dc:rights>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25024"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-04T04:52:07Z</dcterms:available>
<dc:contributor>Hahn, Giso</dc:contributor>
<dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/3.0/"/>
<dc:contributor>Engelhardt, Josh</dc:contributor>
<dc:contributor>Ohl, Sybille</dc:contributor>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Terheiden, Barbara</dc:creator>
<dcterms:title>Correlation of stress in silicon nitride layers with their complete removal by laser ablation</dcterms:title>
<dc:creator>Hahn, Giso</dc:creator>
<dcterms:abstract xml:lang="eng">In recent years laser ablation of dielectric layers for local structuring of solar cell passivation layers has become more and more common. Apart from adjusting laser parameters for a damage-free removal of dielectric layers, it is necessary to prepare the surface in a way suitable for the respective contact methods (screen printing, nickel plating, etc.). In this study, we demonstrate for silicon nitride layers how the deposition parameters and deposition method correlate to the characteristics of the ablated area. Furthermore a simple method to predict these characteristics is introduced based on the determination of the intrinsic stress in the dielectric layer. A correlation between compressively stressed or stress-free silicon nitride layers and a complete ablation was found.</dcterms:abstract>
<dc:language>eng</dc:language>
<dc:contributor>Terheiden, Barbara</dc:contributor>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-04T04:52:07Z</dc:date>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/25024/2/Engelhardt_250241.pdf"/>
<dcterms:bibliographicCitation>Energy Procedia ; 38 (2013). - S. 707-712</dcterms:bibliographicCitation>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
