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Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance

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2023

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Solar RRL. Wiley. 2023, 7(21), 2300491. ISSN 2367-198X. eISSN 2367-198X. Available under: doi: 10.1002/solr.202300491

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Metallization of polycrystalline-silicon/silicon oxide (poly-Si/SiOx) passivating contacts with a fire-through silver (Ag) paste is a crucial process for implementation of passivating contacts in industrial manufacturing of solar cells. For a microscopic understanding of the metallization process, the contact forming interface between the Ag crystallites and the poly-Si layer is investigated with high-resolution transmission electron microscopy (TEM). For this purpose, multilayer atmospheric pressure chemical vapour deposition (APCVD) poly-Si samples with a SiOx layer between the individual poly-Si layers were fabricated, screen-printed with a lead-free Ag paste and contact fired. Electron micrographs show that in this process the etching of the paste and the subsequent Ag crystallite formation is stopped by this interface with the SiOx layer. Additionally, energy-dispersive x-ray mapping reveals the presence of an oxide layer around the Ag crystallites. This finding differs significantly from well-investigated classical cell concepts with contact formation on diffused crystalline-silicon. Moreover, an analysis of the Ag crystallite orientation in correlation to the neighbouring Si crystallite orientation indicates no direct relationship. Finally, it was shown that the use of this multilayer approach is favorable for integration into a solar cell concept leading to a higher passivation quality at the metallized area and lower contact resistivity.

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530 Physik

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ISO 690GLATTHAAR, Raphael, Franz-Philipp SCHMIDT, Adnan HAMMUD, Thomas LUNKENBEIN, Tobias OKKER, Frank HUSTER, Sven SEREN, Beatriz Cela GREVEN, Giso HAHN, Barbara TERHEIDEN, 2023. Silver Metallization with Controlled Etch Stop Using SiOx Layers in Passivating Contacts for Improved Silicon Solar Cell Performance. In: Solar RRL. Wiley. 2023, 7(21), 2300491. ISSN 2367-198X. eISSN 2367-198X. Available under: doi: 10.1002/solr.202300491
BibTex
@article{Glatthaar2023-09-12Silve-67747,
  year={2023},
  doi={10.1002/solr.202300491},
  title={Silver Metallization with Controlled Etch Stop Using SiO<sub>x</sub> Layers in Passivating Contacts for Improved Silicon Solar Cell Performance},
  number={21},
  volume={7},
  issn={2367-198X},
  journal={Solar RRL},
  author={Glatthaar, Raphael and Schmidt, Franz-Philipp and Hammud, Adnan and Lunkenbein, Thomas and Okker, Tobias and Huster, Frank and Seren, Sven and Greven, Beatriz Cela and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 2300491}
}
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