Publikation: Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions
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Scanning tunneling microscopy was used to study the surface morphology changes of the H-terminated Si(1 1 1)surface during Ag deposition at elevated temperatures. Flat H-terminated Si(1 1 1) surfaces were prepared by NH4F etching. Domains of various dimer-adatom-stacking-fault superstructures, such as 3 x 3, 5 x 5, 7 x 7, and 9 x 9 were observed on the Si(1 1 1) surface after hot deposition of 1 ML Ag at 550 °C This phenomenon was compared with hydrogen thermal desorption experiments, which did not show the formation of metastable surface superstructures at temperatures near 550 °C. All metastable superstructures obtained after hot Ag deposition at 550 °C were found to convert into the 7 x 7 reconstruction after annealing at 600 °C.
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FONIN, Mikhail, Jin M. CHOI, Ulrich MAY, Jan O. HAUCH, Ulrich RÜDIGER, Gernot GÜNTHERODT, 2002. Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions. In: Surface Science. 2002, 511, pp. 312-318. Available under: doi: 10.1016/S0039-6028(02)01514-5BibTex
@article{Fonin2002tempe-5013, year={2002}, doi={10.1016/S0039-6028(02)01514-5}, title={Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions}, volume={511}, journal={Surface Science}, pages={312--318}, author={Fonin, Mikhail and Choi, Jin M. and May, Ulrich and Hauch, Jan O. and Rüdiger, Ulrich and Güntherodt, Gernot} }
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<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/5013"> <dcterms:bibliographicCitation>First publ. in: Surface Science 511 (2002), S. 312 318</dcterms:bibliographicCitation> <dc:creator>May, Ulrich</dc:creator> <dc:contributor>Güntherodt, Gernot</dc:contributor> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dcterms:title>Low temperature formation of Si(111)-(2n+1) x (2n+1) surface reconstructions</dcterms:title> <dc:format>application/pdf</dc:format> <dc:contributor>Fonin, Mikhail</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:30Z</dcterms:available> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dcterms:abstract xml:lang="eng">Scanning tunneling microscopy was used to study the surface morphology changes of the H-terminated Si(1 1 1)surface during Ag deposition at elevated temperatures. Flat H-terminated Si(1 1 1) surfaces were prepared by NH4F etching. Domains of various dimer-adatom-stacking-fault superstructures, such as 3 x 3, 5 x 5, 7 x 7, and 9 x 9 were observed on the Si(1 1 1) surface after hot deposition of 1 ML Ag at 550 °C This phenomenon was compared with hydrogen thermal desorption experiments, which did not show the formation of metastable surface superstructures at temperatures near 550 °C. All metastable superstructures obtained after hot Ag deposition at 550 °C were found to convert into the 7 x 7 reconstruction after annealing at 600 °C.</dcterms:abstract> <dc:creator>Güntherodt, Gernot</dc:creator> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5013/1/Low_temperature_formation_of_Si.pdf"/> <dc:contributor>Rüdiger, Ulrich</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:52:30Z</dc:date> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:issued>2002</dcterms:issued> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/5013/1/Low_temperature_formation_of_Si.pdf"/> <dc:creator>Hauch, Jan O.</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Choi, Jin M.</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <dc:creator>Fonin, Mikhail</dc:creator> <dc:contributor>Hauch, Jan O.</dc:contributor> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:creator>Rüdiger, Ulrich</dc:creator> <dc:creator>Choi, Jin M.</dc:creator> <dc:contributor>May, Ulrich</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/5013"/> </rdf:Description> </rdf:RDF>