Publikation: Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates
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2016
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Baldassarre, Leonetta
Sakat, Emilie
Frigerio, Jacopo
Frigerio, J. B. J.
Samarelli, Antonio
Giliberti, Valeria
Pellegrini, Giovanni
Ortolani, Michele
et al.
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ECS Transactions. 2016, 75(8), pp. 247-251. ISSN 1938-6737. eISSN 1938-5862. Available under: doi: 10.1149/07508.0247ecst
Zusammenfassung
Heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work, we investigate, n-type doped Ge epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.
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BALDASSARRE, Leonetta, Emilie SAKAT, Jacopo FRIGERIO, J. B. J. FRIGERIO, Antonio SAMARELLI, Valeria GILIBERTI, Giovanni PELLEGRINI, Marco P. FISCHER, Daniele BRIDA, Michele ORTOLANI, 2016. Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates. In: ECS Transactions. 2016, 75(8), pp. 247-251. ISSN 1938-6737. eISSN 1938-5862. Available under: doi: 10.1149/07508.0247ecstBibTex
@article{Baldassarre2016MidIn-37508,
year={2016},
doi={10.1149/07508.0247ecst},
title={Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates},
number={8},
volume={75},
issn={1938-6737},
journal={ECS Transactions},
pages={247--251},
author={Baldassarre, Leonetta and Sakat, Emilie and Frigerio, Jacopo and Frigerio, J. B. J. and Samarelli, Antonio and Giliberti, Valeria and Pellegrini, Giovanni and Fischer, Marco P. and Brida, Daniele and Ortolani, Michele}
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<dcterms:abstract xml:lang="eng">Heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work, we investigate, n-type doped Ge epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.</dcterms:abstract>
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