Publikation: Ge-on-Si based mid-infrared plasmonics
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In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 1020 cm-3, allowing us to tune the plasma wavelength of Ge in the 3-15 μm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics.
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FRIGERIO, Jacopo, Leonetta BALDASSARRE, Giovanni PELLEGRINI, Marco P. FISCHER, Kevin GALLACHER, Ross W. MILLAR, Andrea BALLABIO, Daniele BRIDA, Giovanni ISELLA, Enrico NAPOLITANI, 2021. Ge-on-Si based mid-infrared plasmonics. Silicon Photonics XVI (online), 6. März 2021 - 12. März 2021. In: REED, Graham T., ed., Andrew P. KNIGHTS, ed.. Silicon Photonics XVI. Bellingham, Washington, USA: SPIE, 2021, 116910M. Proceedings of SPIE. 11691. ISSN 0277-786X. eISSN 1996-756X. ISBN 978-1-5106-4217-1. Available under: doi: 10.1117/12.2576175BibTex
@inproceedings{Frigerio2021GeonS-53431, year={2021}, doi={10.1117/12.2576175}, title={Ge-on-Si based mid-infrared plasmonics}, number={11691}, isbn={978-1-5106-4217-1}, issn={0277-786X}, publisher={SPIE}, address={Bellingham, Washington, USA}, series={Proceedings of SPIE}, booktitle={Silicon Photonics XVI}, editor={Reed, Graham T. and Knights, Andrew P.}, author={Frigerio, Jacopo and Baldassarre, Leonetta and Pellegrini, Giovanni and Fischer, Marco P. and Gallacher, Kevin and Millar, Ross W. and Ballabio, Andrea and Brida, Daniele and Isella, Giovanni and Napolitani, Enrico}, note={Article Number: 116910M} }
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