Publikation: Formation of ordered nanoscale semiconductor dots by ion sputtering
Lade...
Dateien
Datum
1999
Autor:innen
Facsko, Stefan
Koerdt, Clemens
Trappe, Cyril
Kurz, Heinrich
Vogt, Alexander
Hartnagel, Hans L.
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Science. 1999, 285(5433), pp. 1551-1553. Available under: doi: 10.1126/science.285.5433.1551
Zusammenfassung
A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
FACSKO, Stefan, Thomas DEKORSY, Clemens KOERDT, Cyril TRAPPE, Heinrich KURZ, Alexander VOGT, Hans L. HARTNAGEL, 1999. Formation of ordered nanoscale semiconductor dots by ion sputtering. In: Science. 1999, 285(5433), pp. 1551-1553. Available under: doi: 10.1126/science.285.5433.1551BibTex
@article{Facsko1999Forma-8926, year={1999}, doi={10.1126/science.285.5433.1551}, title={Formation of ordered nanoscale semiconductor dots by ion sputtering}, number={5433}, volume={285}, journal={Science}, pages={1551--1553}, author={Facsko, Stefan and Dekorsy, Thomas and Koerdt, Clemens and Trappe, Cyril and Kurz, Heinrich and Vogt, Alexander and Hartnagel, Hans L.} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/8926"> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:creator>Koerdt, Clemens</dc:creator> <dc:creator>Facsko, Stefan</dc:creator> <dc:creator>Dekorsy, Thomas</dc:creator> <dc:contributor>Trappe, Cyril</dc:contributor> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8926/1/Formation_of_ordered_nanoscale_semiconductor_dots_by_ion_sputtering.pdf"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:51:44Z</dcterms:available> <dc:language>eng</dc:language> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <dcterms:abstract xml:lang="eng">A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.</dcterms:abstract> <dc:contributor>Kurz, Heinrich</dc:contributor> <dc:format>application/pdf</dc:format> <dc:contributor>Facsko, Stefan</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:51:44Z</dc:date> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dc:contributor>Hartnagel, Hans L.</dc:contributor> <dc:creator>Trappe, Cyril</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8926"/> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8926/1/Formation_of_ordered_nanoscale_semiconductor_dots_by_ion_sputtering.pdf"/> <dcterms:title>Formation of ordered nanoscale semiconductor dots by ion sputtering</dcterms:title> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dc:creator>Kurz, Heinrich</dc:creator> <dc:contributor>Vogt, Alexander</dc:contributor> <dc:creator>Hartnagel, Hans L.</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:issued>1999</dcterms:issued> <dcterms:bibliographicCitation>First publ. in: Science 285 (1999), 5433, pp. 1551-1553</dcterms:bibliographicCitation> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Koerdt, Clemens</dc:contributor> <dc:creator>Vogt, Alexander</dc:creator> </rdf:Description> </rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein