Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers
Loading...
Date
2021
Editors
Journal ISSN
Electronic ISSN
ISBN
Bibliographical data
Publisher
Series
URI (citable link)
DOI (citable link)
International patent number
Link to the license
EU project number
Project
Open Access publication
Collections
Title in another language
Publication type
Journal article
Publication status
Published
Published in
Physica Status Solidi (A) - Applications and Materials Science ; 218 (2021), 23. - 2100220. - Wiley. - ISSN 1862-6300. - eISSN 1862-6319
Abstract
This study deals with the dynamics of the formation and dissociation of boron-hydrogen (BH) pairs in crystalline silicon during a rapid high temperature treatment and subsequent dark annealing between 200°C and 300°C. Highly accurate resistivity measurements were used to detect BH pairs in chemically polished B-doped FZ-Si(ρ ≈ 1 Ω cm). An unexpectedly high amount of hydrogen is present in the as-purchased wafers. Hydrogen is initially mostly paired to boron but can be dissolved by a high temperature firing step. If a firing step with a peak temperature of around 530°C is applied to bare Si wafers, most of the initial BH pairs are dissolved and hydrogen dimers (H2) form. With increasing peak temperature, an increasing amount of hydrogen leaves the H2 = BH system. The proportion of BH increases with decreasing total hydrogen content. Additional hydrogen can be introduced by firing a wafer passivated with PECVD SiNx:H. The mathematical description with a three-state-model shows a good agreement with the measured data for both bare and coated samples as well as for different annealing temperatures. With increasing dark annealing temperatures, the BH dynamics accelerates while the maximum BH concentration reached decreases. For temperatures above 280°C, significant changes in the reaction dynamics are observed.
Summary in another language
Subject (DDC)
530 Physics
Keywords
Hydrogen, Boron-Hydrogen Pairs, FZ Silicon, Dark Annealing, Firing
Conference
Review
undefined / . - undefined, undefined. - (undefined; undefined)
Cite This
ISO 690
WINTER, Clemens, Jochen SIMON, Axel HERGUTH, 2021. Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 218(23), 2100220. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202100220BibTex
@article{Winter2021-12Study-53889, year={2021}, doi={10.1002/pssa.202100220}, title={Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers}, number={23}, volume={218}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Winter, Clemens and Simon, Jochen and Herguth, Axel}, note={Article Number: 2100220} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/53889"> <dcterms:issued>2021-12</dcterms:issued> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:creator>Herguth, Axel</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-06-07T07:38:43Z</dcterms:available> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/53889/1/Winter_2-j8v3zccsolhs6.pdf"/> <dcterms:title>Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers</dcterms:title> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/53889/1/Winter_2-j8v3zccsolhs6.pdf"/> <dc:language>eng</dc:language> <foaf:homepage rdf:resource="http://localhost:8080/"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/53889"/> <dcterms:abstract xml:lang="eng">This study deals with the dynamics of the formation and dissociation of boron-hydrogen (BH) pairs in crystalline silicon during a rapid high temperature treatment and subsequent dark annealing between 200°C and 300°C. Highly accurate resistivity measurements were used to detect BH pairs in chemically polished B-doped FZ-Si(ρ ≈ 1 Ω cm). An unexpectedly high amount of hydrogen is present in the as-purchased wafers. Hydrogen is initially mostly paired to boron but can be dissolved by a high temperature firing step. If a firing step with a peak temperature of around 530°C is applied to bare Si wafers, most of the initial BH pairs are dissolved and hydrogen dimers (H<sub>2</sub>) form. With increasing peak temperature, an increasing amount of hydrogen leaves the H<sub>2</sub> = BH system. The proportion of BH increases with decreasing total hydrogen content. Additional hydrogen can be introduced by firing a wafer passivated with PECVD SiN<sub>x</sub>:H. The mathematical description with a three-state-model shows a good agreement with the measured data for both bare and coated samples as well as for different annealing temperatures. With increasing dark annealing temperatures, the BH dynamics accelerates while the maximum BH concentration reached decreases. For temperatures above 280°C, significant changes in the reaction dynamics are observed.</dcterms:abstract> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Winter, Clemens</dc:contributor> <dc:contributor>Simon, Jochen</dc:contributor> <dc:creator>Simon, Jochen</dc:creator> <dc:creator>Winter, Clemens</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-06-07T07:38:43Z</dc:date> </rdf:Description> </rdf:RDF>
Internal note
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Examination date of dissertation
Method of financing
Comment on publication
Alliance license
Corresponding Authors der Uni Konstanz vorhanden
International Co-Authors
Bibliography of Konstanz
Yes
Refereed
Yes