Substrate-induced topological minibands in graphene

dc.contributor.authorWolf, Tobias M. R.
dc.contributor.authorZilberberg, Oded
dc.contributor.authorLevkivskyi, Ivan
dc.contributor.authorBlatter, Gianni
dc.date.accessioned2021-09-23T12:58:20Z
dc.date.available2021-09-23T12:58:20Z
dc.date.issued2018eng
dc.description.abstractThe honeycomb lattice sets the basic arena for numerous ideas to implement electronic, photonic, or phononic topological bands in (meta-)materials. Novel opportunities to manipulate Dirac electrons in graphene through band engineering arise from superlattice potentials as induced by a substrate such as hexagonal boron-nitride. Making use of the general form of a weak substrate potential as dictated by symmetry, we analytically derive the low-energy minibands of the superstructure, including a characteristic 1.5 Dirac cone deriving from a three-band crossing at the Brillouin zone edge. Assuming a large supercell, we focus on a single Dirac cone (or valley) and find all possible arrangements of the low-energy electron and hole bands in a complete six-dimensional parameter space. We identify the various symmetry planes in parameter space inducing gap closures and find the sectors hosting topological minibands, including also complex band crossings that generate a valley Chern number atypically larger than one. Our map provides a starting point for the systematic design of topological bands by substrate engineering.eng
dc.description.versionpublishedeng
dc.identifier.arxiv1805.10670v3eng
dc.identifier.doi10.1103/PhysRevB.98.125408eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/54995
dc.language.isoengeng
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dc.subject.ddc530eng
dc.titleSubstrate-induced topological minibands in grapheneeng
dc.typeJOURNAL_ARTICLEeng
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@article{Wolf2018Subst-54995,
  year={2018},
  doi={10.1103/PhysRevB.98.125408},
  title={Substrate-induced topological minibands in graphene},
  number={12},
  volume={98},
  issn={2469-9950},
  journal={Physical Review B},
  author={Wolf, Tobias M. R. and Zilberberg, Oded and Levkivskyi, Ivan and Blatter, Gianni},
  note={Article Number: 125408}
}
kops.citation.iso690WOLF, Tobias M. R., Oded ZILBERBERG, Ivan LEVKIVSKYI, Gianni BLATTER, 2018. Substrate-induced topological minibands in graphene. In: Physical Review B. American Physical Society (APS). 2018, 98(12), 125408. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.98.125408deu
kops.citation.iso690WOLF, Tobias M. R., Oded ZILBERBERG, Ivan LEVKIVSKYI, Gianni BLATTER, 2018. Substrate-induced topological minibands in graphene. In: Physical Review B. American Physical Society (APS). 2018, 98(12), 125408. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.98.125408eng
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    <dcterms:abstract xml:lang="eng">The honeycomb lattice sets the basic arena for numerous ideas to implement electronic, photonic, or phononic topological bands in (meta-)materials. Novel opportunities to manipulate Dirac electrons in graphene through band engineering arise from superlattice potentials as induced by a substrate such as hexagonal boron-nitride. Making use of the general form of a weak substrate potential as dictated by symmetry, we analytically derive the low-energy minibands of the superstructure, including a characteristic 1.5 Dirac cone deriving from a three-band crossing at the Brillouin zone edge. Assuming a large supercell, we focus on a single Dirac cone (or valley) and find all possible arrangements of the low-energy electron and hole bands in a complete six-dimensional parameter space. We identify the various symmetry planes in parameter space inducing gap closures and find the sectors hosting topological minibands, including also complex band crossings that generate a valley Chern number atypically larger than one. Our map provides a starting point for the systematic design of topological bands by substrate engineering.</dcterms:abstract>
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kops.sourcefieldPhysical Review B. American Physical Society (APS). 2018, <b>98</b>(12), 125408. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.98.125408deu
kops.sourcefield.plainPhysical Review B. American Physical Society (APS). 2018, 98(12), 125408. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.98.125408deu
kops.sourcefield.plainPhysical Review B. American Physical Society (APS). 2018, 98(12), 125408. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.98.125408eng
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source.periodicalTitlePhysical Review Beng
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