Publikation: Generation–recombination noise of DX centers in AlN:Si
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2001
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Zeisel, Roland
Ambacher, Oliver
Brandt, Martin S.
Stutzmann, Martin
Baldovino, Silvia
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Applied Physics Letters. American Institute of Physics (AIP). 2001, 79(15), pp. 2396-2398. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1405426
Zusammenfassung
Generation–recombination noise is observed in Si-doped aluminum nitride (AlN:Si). Both the magnitude and the characteristic frequency of the generation–recombination noise power density are found to be thermally activated. Using a model based on charge carrier number fluctuations in a two-level system, transition energies and potential barriers of the DX center formed by Si donors in AlN are quantitatively determined.
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GOENNENWEIN, Sebastian T. B., Roland ZEISEL, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, Silvia BALDOVINO, 2001. Generation–recombination noise of DX centers in AlN:Si. In: Applied Physics Letters. American Institute of Physics (AIP). 2001, 79(15), pp. 2396-2398. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1405426BibTex
@article{Goennenwein2001Gener-52556, year={2001}, doi={10.1063/1.1405426}, title={Generation–recombination noise of DX centers in AlN:Si}, number={15}, volume={79}, issn={0003-6951}, journal={Applied Physics Letters}, pages={2396--2398}, author={Goennenwein, Sebastian T. B. and Zeisel, Roland and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin and Baldovino, Silvia} }
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