Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions

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2018
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Solar Energy Materials and Solar Cells. 2018, 188, pp. 112-118. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.08.019
Zusammenfassung

Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H or AlOx:H/SiNx:H during treatment at 150 °C and 1 sun equivalent illumination intensity. Degradation of SiNx:H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlOx:H/SiNx:H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.

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Fachgebiet (DDC)
530 Physik
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Light induced degradation, Surface related degradation, Surface passivation, Diffused silicon, Silicon nitride, Aluminium oxide
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ISO 690SPERBER, David, Anton SCHWARZ, Axel HERGUTH, Giso HAHN, 2018. Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions. In: Solar Energy Materials and Solar Cells. 2018, 188, pp. 112-118. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.08.019
BibTex
@article{Sperber2018Enhan-43616,
  year={2018},
  doi={10.1016/j.solmat.2018.08.019},
  title={Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions},
  volume={188},
  issn={0927-0248},
  journal={Solar Energy Materials and Solar Cells},
  pages={112--118},
  author={Sperber, David and Schwarz, Anton and Herguth, Axel and Hahn, Giso}
}
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    <dcterms:abstract xml:lang="eng">Significant surface related degradation (SRD) is observed in samples passivated with either SiN&lt;sub&gt;x&lt;/sub&gt;:H or AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H during treatment at 150 °C and 1 sun equivalent illumination intensity. Degradation of SiN&lt;sub&gt;x&lt;/sub&gt;:H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.</dcterms:abstract>
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