Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions

Sperber, David; Schwarz, Anton; Herguth, Axel; Hahn, Giso

Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions

Dateien

Sperber_2-h8gbi89q32jg1.pdfGröße: 332.33 KBDownloads: 294

Datum

2018

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Solar Energy Materials and Solar Cells. 2018, 188, pp. 112-118. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.08.019

Zusammenfassung

Significant surface related degradation (SRD) is observed in samples passivated with either SiN_x:H or AlO_x:H/SiN_x:H during treatment at 150 °C and 1 sun equivalent illumination intensity. Degradation of SiN_x:H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlO_x:H/SiN_x:H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Light induced degradation, Surface related degradation, Surface passivation, Diffused silicon, Silicon nitride, Aluminium oxide

Zitieren

ISO 690

SPERBER, David, Anton SCHWARZ, Axel HERGUTH, Giso HAHN, 2018. Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions. In: Solar Energy Materials and Solar Cells. 2018, 188, pp. 112-118. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.08.019

BibTex

@article{Sperber2018Enhan-43616,
  year={2018},
  doi={10.1016/j.solmat.2018.08.019},
  title={Enhanced stability of passivation quality on diffused silicon surfaces under light-induced degradation conditions},
  volume={188},
  issn={0927-0248},
  journal={Solar Energy Materials and Solar Cells},
  pages={112--118},
  author={Sperber, David and Schwarz, Anton and Herguth, Axel and Hahn, Giso}
}

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    <dcterms:abstract xml:lang="eng">Significant surface related degradation (SRD) is observed in samples passivated with either SiN&lt;sub&gt;x&lt;/sub&gt;:H or AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H during treatment at 150 °C and 1 sun equivalent illumination intensity. Degradation of SiN&lt;sub&gt;x&lt;/sub&gt;:H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.</dcterms:abstract>
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