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Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy

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2017

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Ohshima, Ryo
Dushenko, Sergey
Ando, Yuichiro
Weiler, Mathias
Huebl, Hans
Shinjo, Teruya
Shiraishi, Masashi

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Applied Physics Letters. American Institute of Physics (AIP). 2017, 110(18), 182402. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4983012

Zusammenfassung

We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For a fixed Py thickness, we observed an increase in the Gilbert damping parameter with decreasing resistivity of the Si channel. For a fixed Si doping concentration, we measured an increasing Gilbert damping parameter for decreasing Py layer thickness. No increase in the Gilbert damping parameter was found for Py/Si samples with an insulating interlayer. We attribute our observations to an enhanced spin injection into the low-resistivity Si by spin pumping.

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ISO 690OHSHIMA, Ryo, Stefan KLINGLER, Sergey DUSHENKO, Yuichiro ANDO, Mathias WEILER, Hans HUEBL, Teruya SHINJO, Sebastian T. B. GOENNENWEIN, Masashi SHIRAISHI, 2017. Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy. In: Applied Physics Letters. American Institute of Physics (AIP). 2017, 110(18), 182402. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4983012
BibTex
@article{Ohshima2017-04-24T00:50:06Zinjec-52403,
  year={2017},
  doi={10.1063/1.4983012},
  title={Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy},
  number={18},
  volume={110},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Ohshima, Ryo and Klingler, Stefan and Dushenko, Sergey and Ando, Yuichiro and Weiler, Mathias and Huebl, Hans and Shinjo, Teruya and Goennenwein, Sebastian T. B. and Shiraishi, Masashi},
  note={Article Number: 182402}
}
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