Publikation: Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy
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We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For a fixed Py thickness, we observed an increase in the Gilbert damping parameter with decreasing resistivity of the Si channel. For a fixed Si doping concentration, we measured an increasing Gilbert damping parameter for decreasing Py layer thickness. No increase in the Gilbert damping parameter was found for Py/Si samples with an insulating interlayer. We attribute our observations to an enhanced spin injection into the low-resistivity Si by spin pumping.
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OHSHIMA, Ryo, Stefan KLINGLER, Sergey DUSHENKO, Yuichiro ANDO, Mathias WEILER, Hans HUEBL, Teruya SHINJO, Sebastian T. B. GOENNENWEIN, Masashi SHIRAISHI, 2017. Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy. In: Applied Physics Letters. American Institute of Physics (AIP). 2017, 110(18), 182402. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4983012BibTex
@article{Ohshima2017-04-24T00:50:06Zinjec-52403, year={2017}, doi={10.1063/1.4983012}, title={Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy}, number={18}, volume={110}, issn={0003-6951}, journal={Applied Physics Letters}, author={Ohshima, Ryo and Klingler, Stefan and Dushenko, Sergey and Ando, Yuichiro and Weiler, Mathias and Huebl, Hans and Shinjo, Teruya and Goennenwein, Sebastian T. B. and Shiraishi, Masashi}, note={Article Number: 182402} }
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