Impact of temperature and doping on LETID and regeneration in mc-Si

Fritz, Jakob; Zuschlag, Annika; Skorka, Daniel; Schmid, Andreas; Hahn, Giso

Impact of temperature and doping on LETID and regeneration in mc-Si

Dateien

Fritz_2-fbccki1mkmyw5.pdfGröße: 1.07 MBDownloads: 409

Datum

2017

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

SMETS, Arno, ed. and others. 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference. München: WIP, 2017, pp. 569-572. ISSN 2196-0992. ISBN 3-936338-47-7. Available under: doi: 10.4229/EUPVSEC20172017-2AV.1.40

Zusammenfassung

Light and elevated temperature induced degradation can be observed in multicrystalline Si PERC solar cells and results in efficiency losses of up to 12%rel. This work investigates the impact of temperature as well as doping on the degradation and regeneration behavior of lifetime samples. While ungettered Ga-doped samples did not show any regeneration effect within the duration of the experiment, increasing the treatment temperature sped up the degradation and regeneration where it could be observed. Ga-doped samples showed a slower degradation compared to B-doped samples. For higher temperatures (≥200°C) the lifetimes during regeneration exceeded the initial lifetimes before starting the illumination treatment for the gettered samples. After regeneration at higher temperature, the stability of lifetime at 75°C was tested. When tested after treatment at 150°C and before the lifetime exceeded the initial value, it stayed stable. After treatment at 250°C until the lifetime exceeded the initial lifetime, it decreased again during the stability test. However, the kinetics of this decrease was much slower than during the initial degradation.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Degradation, Lifetime, Multicrystalline Silicon

Konferenz

33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017, 25. Sept. 2017 - 29. Sept. 2017, Amsterdam

Zitieren

ISO 690

FRITZ, Jakob, Annika ZUSCHLAG, Daniel SKORKA, Andreas SCHMID, Giso HAHN, 2017. Impact of temperature and doping on LETID and regeneration in mc-Si. 33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017. Amsterdam, 25. Sept. 2017 - 29. Sept. 2017. In: SMETS, Arno, ed. and others. 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference. München: WIP, 2017, pp. 569-572. ISSN 2196-0992. ISBN 3-936338-47-7. Available under: doi: 10.4229/EUPVSEC20172017-2AV.1.40

BibTex

@inproceedings{Fritz2017Impac-42288,
  year={2017},
  doi={10.4229/EUPVSEC20172017-2AV.1.40},
  title={Impact of temperature and doping on LETID and regeneration in mc-Si},
  isbn={3-936338-47-7},
  issn={2196-0992},
  publisher={WIP},
  address={München},
  booktitle={33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference},
  pages={569--572},
  editor={Smets, Arno},
  author={Fritz, Jakob and Zuschlag, Annika and Skorka, Daniel and Schmid, Andreas and Hahn, Giso}
}

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Universitätsbibliographie

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