Investigation of photoinduced tunneling current and local surface photovoltage by STM

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Date
1998
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Matthes, Thomas W.
Sommerhalter, Christof
Rettenberger, Armin
Böhmisch, Mathias
Lux-Steiner, Martha Christina
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Applied Surface Science ; 123-124 (1998). - pp. 187-191
Abstract
Photoassisted scanning tunneling microscopy was used to simultaneously image topoyraphy, photoinduced tunneling current and local surface photovoltage on an nm-scale. A novel interrupted z-feedback technique is presented which overcomes the limitations of previously reported techniques, that were restricted to semiconductor surfaces with a high density of surface states. As an example, measurements on the van der Waals surface of WS2 are shown. This semiconductor surface is known to be free of intrinsic surface states. In the vicinity of monolayer steps an enhanced minority charge carrier recombination and a reduced photovoltage was observed.
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530 Physics
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Scanning tunneling spectroscopy,Surface photovoltage,WS2
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ISO 690MATTHES, Thomas W., Christof SOMMERHALTER, Armin RETTENBERGER, Mathias BÖHMISCH, Johannes BONEBERG, Martha Christina LUX-STEINER, Paul LEIDERER, 1998. Investigation of photoinduced tunneling current and local surface photovoltage by STM. In: Applied Surface Science. 123-124, pp. 187-191. Available under: doi: 10.1016/S0169-4332(97)00480-7
BibTex
@article{Matthes1998Inves-9427,
  year={1998},
  doi={10.1016/S0169-4332(97)00480-7},
  title={Investigation of photoinduced tunneling current and local surface photovoltage by STM},
  volume={123-124},
  journal={Applied Surface Science},
  pages={187--191},
  author={Matthes, Thomas W. and Sommerhalter, Christof and Rettenberger, Armin and Böhmisch, Mathias and Boneberg, Johannes and Lux-Steiner, Martha Christina and Leiderer, Paul}
}
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