Complementary switching in single Nb3O7(OH) nanowires

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APL Materials. American Institute of Physics (AIP). 2021, 9(7), 071105. eISSN 2166-532X. Available under: doi: 10.1063/5.0052589
Zusammenfassung

Single nanowires and networks are considered as promising candidates for miniaturized memristive devices for brain-inspired systems. Moreover, single crystalline nanostructures are useful model systems to gain a deeper understanding in the involved switching mechanism of the investigated material. Here, we report on hydrothermally grown single crystalline Nb3O7(OH) nanowires showing a complementary resistive switching (CRS) behavior. The CRS characteristics can be related to an oxygen vacancy migration at the electrode/metal hydroxide interface. Therefore, an oxygen plasma treatment is used to reduce the oxygen vacancy content, resulting in a total reduction of the device conductivity. Furthermore, temporal resolved current–voltage measurements demonstrate the dependence of the destructive readout process of the resistance states on the voltage amplitude and polarity.

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ISO 690EBENHOCH, Carola, Thomas GÄNSLER, Stefan SCHUPP, Matthias HAGNER, Anna FRANK, Christina SCHEU, Lukas SCHMIDT-MENDE, 2021. Complementary switching in single Nb3O7(OH) nanowires. In: APL Materials. American Institute of Physics (AIP). 2021, 9(7), 071105. eISSN 2166-532X. Available under: doi: 10.1063/5.0052589
BibTex
@article{Ebenhoch2021Compl-54376,
  year={2021},
  doi={10.1063/5.0052589},
  title={Complementary switching in single Nb<sub>3</sub>O<sub>7</sub>(OH) nanowires},
  number={7},
  volume={9},
  journal={APL Materials},
  author={Ebenhoch, Carola and Gänsler, Thomas and Schupp, Stefan and Hagner, Matthias and Frank, Anna and Scheu, Christina and Schmidt-Mende, Lukas},
  note={Article Number: 071105}
}
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