Enhanced carrier collection observed in mechanically structured silicon with small diffusion length

Hahn, Giso; Zechner, Christoph; Rinio, Markus; Fath, Peter; Willeke, Gerd; Bucher, Ernst

Enhanced carrier collection observed in mechanically structured silicon with small diffusion length

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Date

1999

Authors

Hahn, Giso

Zechner, Christoph

Rinio, Markus

Fath, Peter

Willeke, Gerd

Bucher, Ernst

DOI (citable link)

10.1063/1.371809

Collections

Physik

Publication type

Journal article

Published in

Journal of Applied Physics ; 86 (1999), 12. - pp. 7179-7182. - ISSN 0021-8979. - eISSN 1089-7550

Abstract

The diffusion length of minority charge carriers in the silicon bulk Ldiff is an important characteristic of optoelectronic devices fabricated from low cost silicon wafers. In this study computer simulations have been carried out to calculate the beneficial effects of a macroscopic surface texturization on the charge carriergeneration and the collection probability. Textured solar cells should be able to collect charge carriers more effectively resulting in an increased current due to the special emitter geometry resulting from the texture, decreased reflection losses, and the inclined penetration of the light. In order to prove this expected behavior, deeply V-textured solar cells have been processed and characterized on low cost silicon reaching an Ldiff of about 25 μm. Spatially resolved high resolution measurements of the internal quantum efficiency exhibit a strongly increased signal in the texture tips which is the first experimental proof of the increased charge carrier collection probability of deeply textured solar cells. This effect can further be seen in cross sectional electron beam induced current measurements and the mechanical texture results in an overall gain in short circuit current density of about 11% and in efficiency of about 8% relatively.

Subject (DDC)

530 Physics

Cite This

ISO 690

HAHN, Giso, Christoph ZECHNER, Markus RINIO, Peter FATH, Gerd WILLEKE, Ernst BUCHER, 1999. Enhanced carrier collection observed in mechanically structured silicon with small diffusion length. In: Journal of Applied Physics. 86(12), pp. 7179-7182. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.371809

BibTex

@article{Hahn1999Enhan-30963,
  year={1999},
  doi={10.1063/1.371809},
  title={Enhanced carrier collection observed in mechanically structured silicon with small diffusion length},
  number={12},
  volume={86},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  pages={7179--7182},
  author={Hahn, Giso and Zechner, Christoph and Rinio, Markus and Fath, Peter and Willeke, Gerd and Bucher, Ernst}
}

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