N-type multicrystalline silicon solar cells with BBr3-diffused front junction

Vorschaubild
Dateien
Libal_2-cki74yqvxqii1.pdf
Libal_2-cki74yqvxqii1.pdfGröße: 167.34 KBDownloads: 191
Datum
2005
Autor:innen
Libal, Joris
Petres, Roman
Kopecek, Radovan
Wambach, Karsten
Fath, Peter
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
http://nbn-resolving.de/urn:nbn:de:bsz:352-2-cki74yqvxqii1
DOI (zitierfähiger Link)
https://doi.org/10.1109/PVSC.2005.1488356
ArXiv-ID
Internationale Patentnummer
Link zur Lizenz
Urheberrechtlich geschützt
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Physik
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ: IEEE Operations Center, 2005, pp. 1209-1212. ISSN 0160-8371. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488356
Zusammenfassung

A simplified laboratory process with one photolithographic step for front junction solar cells on n-type multicrystalline (mc) silicon has been developed. The emitter diffusion is done in an open tube furnace with BBr3 and back-surface-field diffusion using POCl3, loading the wafers front-to-front and back-to-back respectively and thus avoiding additional etching steps. The front surface has been passivated by a 10 nm thermal oxide grown in a tube furnace. With this simple process, efficiencies of 11.0% on n-type mc-Si and 11.5% on n-type Cz-Si have been realized without antireflection coating and without surface texture. Applying a double layer antireflection coating (DARC) on these cells, efficiencies of 16.4% on Cz-Si and 14.7% on mc-Si have been achieved.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
IEEE Photovoltaic Specialists Conference ; 31, 3. Jan. 2005 - 7. Jan. 2005, Lake Buena Vista, FL
Rezension
undefined / . - undefined, undefined
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Datensätze
Zitieren
ISO 690LIBAL, Joris, Roman PETRES, Radovan KOPECEK, Giso HAHN, Karsten WAMBACH, Peter FATH, 2005. N-type multicrystalline silicon solar cells with BBr3-diffused front junction. IEEE Photovoltaic Specialists Conference ; 31. Lake Buena Vista, FL, 3. Jan. 2005 - 7. Jan. 2005. In: Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ: IEEE Operations Center, 2005, pp. 1209-1212. ISSN 0160-8371. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488356
BibTex
@inproceedings{Libal2005Ntype-30883,
  year={2005},
  doi={10.1109/PVSC.2005.1488356},
  title={N-type multicrystalline silicon solar cells with BBr<sub>3</sub>-diffused front junction},
  isbn={0-7803-8707-4},
  issn={0160-8371},
  publisher={IEEE Operations Center},
  address={Piscataway, NJ},
  booktitle={Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005},
  pages={1209--1212},
  author={Libal, Joris and Petres, Roman and Kopecek, Radovan and Hahn, Giso and Wambach, Karsten and Fath, Peter}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/30883">
    <dcterms:title>N-type multicrystalline silicon solar cells with BBr&lt;sub&gt;3&lt;/sub&gt;-diffused front junction</dcterms:title>
    <dc:creator>Libal, Joris</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Kopecek, Radovan</dc:creator>
    <dc:contributor>Kopecek, Radovan</dc:contributor>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/30883"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Wambach, Karsten</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-05-05T13:46:04Z</dcterms:available>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Petres, Roman</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Fath, Peter</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-05-05T13:46:04Z</dc:date>
    <dc:creator>Wambach, Karsten</dc:creator>
    <dcterms:issued>2005</dcterms:issued>
    <dc:language>eng</dc:language>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30883/1/Libal_2-cki74yqvxqii1.pdf"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Petres, Roman</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/30883/1/Libal_2-cki74yqvxqii1.pdf"/>
    <dc:creator>Fath, Peter</dc:creator>
    <dcterms:abstract xml:lang="eng">A simplified laboratory process with one photolithographic step for front junction solar cells on n-type multicrystalline (mc) silicon has been developed. The emitter diffusion is done in an open tube furnace with BBr3 and back-surface-field diffusion using POCl3, loading the wafers front-to-front and back-to-back respectively and thus avoiding additional etching steps. The front surface has been passivated by a 10 nm thermal oxide grown in a tube furnace. With this simple process, efficiencies of 11.0% on n-type mc-Si and 11.5% on n-type Cz-Si have been realized without antireflection coating and without surface texture. Applying a double layer antireflection coating (DARC) on these cells, efficiencies of 16.4% on Cz-Si and 14.7% on mc-Si have been achieved.</dcterms:abstract>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Libal, Joris</dc:contributor>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen