Publikation:

N-type multicrystalline silicon solar cells with BBr3-diffused front junction

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Datum

2005

Autor:innen

Libal, Joris
Petres, Roman
Kopecek, Radovan
Wambach, Karsten
Fath, Peter

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http://nbn-resolving.de/urn:nbn:de:bsz:352-2-cki74yqvxqii1
DOI (zitierfähiger Link)
https://doi.org/10.1109/PVSC.2005.1488356
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Physik: Publikationen
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Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ: IEEE Operations Center, 2005, pp. 1209-1212. ISSN 0160-8371. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488356

Zusammenfassung

A simplified laboratory process with one photolithographic step for front junction solar cells on n-type multicrystalline (mc) silicon has been developed. The emitter diffusion is done in an open tube furnace with BBr3 and back-surface-field diffusion using POCl3, loading the wafers front-to-front and back-to-back respectively and thus avoiding additional etching steps. The front surface has been passivated by a 10 nm thermal oxide grown in a tube furnace. With this simple process, efficiencies of 11.0% on n-type mc-Si and 11.5% on n-type Cz-Si have been realized without antireflection coating and without surface texture. Applying a double layer antireflection coating (DARC) on these cells, efficiencies of 16.4% on Cz-Si and 14.7% on mc-Si have been achieved.

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Fachgebiet (DDC)
530 Physik

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IEEE Photovoltaic Specialists Conference ; 31, 3. Jan. 2005 - 7. Jan. 2005, Lake Buena Vista, FL
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ISO 690LIBAL, Joris, Roman PETRES, Radovan KOPECEK, Giso HAHN, Karsten WAMBACH, Peter FATH, 2005. N-type multicrystalline silicon solar cells with BBr3-diffused front junction. IEEE Photovoltaic Specialists Conference ; 31. Lake Buena Vista, FL, 3. Jan. 2005 - 7. Jan. 2005. In: Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ: IEEE Operations Center, 2005, pp. 1209-1212. ISSN 0160-8371. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488356
BibTex
@inproceedings{Libal2005Ntype-30883,
  year={2005},
  doi={10.1109/PVSC.2005.1488356},
  title={N-type multicrystalline silicon solar cells with BBr<sub>3</sub>-diffused front junction},
  isbn={0-7803-8707-4},
  issn={0160-8371},
  publisher={IEEE Operations Center},
  address={Piscataway, NJ},
  booktitle={Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005},
  pages={1209--1212},
  author={Libal, Joris and Petres, Roman and Kopecek, Radovan and Hahn, Giso and Wambach, Karsten and Fath, Peter}
}
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