High-fidelity quantum gates in Si/SiGe double quantum dots

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2018
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Zajac, David M.
Sigillito, Anthony J.
Borjans, Felix
Taylor, Jacob M.
Petta, Jason R.
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Physical Review B. 2018, 97(8), 085421. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.97.085421
Zusammenfassung

Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.

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ISO 690RUSS, Maximilian, David M. ZAJAC, Anthony J. SIGILLITO, Felix BORJANS, Jacob M. TAYLOR, Jason R. PETTA, Guido BURKARD, 2018. High-fidelity quantum gates in Si/SiGe double quantum dots. In: Physical Review B. 2018, 97(8), 085421. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.97.085421
BibTex
@article{Russ2018Highf-41584,
  year={2018},
  doi={10.1103/PhysRevB.97.085421},
  title={High-fidelity quantum gates in Si/SiGe double quantum dots},
  number={8},
  volume={97},
  issn={2469-9950},
  journal={Physical Review B},
  author={Russ, Maximilian and Zajac, David M. and Sigillito, Anthony J. and Borjans, Felix and Taylor, Jacob M. and Petta, Jason R. and Burkard, Guido},
  note={Article Number: 085421}
}
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