Publikation:

Optical reflectivity of si above the melting point

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118_physstatsol_1992.pdf
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1992

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Yavaṣ, Oğuz
Mierswa, Bernhard

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-30897
DOI (zitierfähiger Link)
https://doi.org/10.1002/pssb.2221740130
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Physica Status Solidi / B. 1992, 174(1), pp. 295-300. Available under: doi: 10.1002/pssb.2221740130

Zusammenfassung

The variation of the optical reflectivity of a Si single during irradiation with two successive Nd:YAG laser pulse is investigated with ns resolution. The first pulse melts the surface and therefore the reflection coefficient increases up to the value of the metallic liquid at the melting temperature (1685 K). Upon further heating the surface with the second, time-delayed pulse, a decrease of the reflection coefficient is observed, resulting from the temperature-dependent dielectric function of the molten Si. The largest decrease in the reflectivity that could be reached before damaging the surface amounted to 9% for a probe wavelength of 633 nm. The application of a simple Drude model for the optical constants above the melting point is discussed.

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530 Physik

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ISO 690BONEBERG, Johannes, Oğuz YAVAṢ, Bernhard MIERSWA, Paul LEIDERER, 1992. Optical reflectivity of si above the melting point. In: Physica Status Solidi / B. 1992, 174(1), pp. 295-300. Available under: doi: 10.1002/pssb.2221740130
BibTex
@article{Boneberg1992Optic-9279,
  year={1992},
  doi={10.1002/pssb.2221740130},
  title={Optical reflectivity of si above the melting point},
  number={1},
  volume={174},
  journal={Physica Status Solidi / B},
  pages={295--300},
  author={Boneberg, Johannes and Yavaṣ, Oğuz and Mierswa, Bernhard and Leiderer, Paul}
}
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    <dcterms:abstract xml:lang="eng">The variation of the optical reflectivity of a Si single during irradiation with two successive Nd:YAG laser pulse is investigated with ns resolution. The first pulse melts the surface and therefore the reflection coefficient increases up to the value of the metallic liquid at the melting temperature (1685 K). Upon further heating the surface with the second, time-delayed pulse, a decrease of the reflection coefficient is observed, resulting from the temperature-dependent dielectric function of the molten Si. The largest decrease in the reflectivity that could be reached before damaging the surface amounted to 9% for a probe wavelength of 633 nm. The application of a simple Drude model for the optical constants above the melting point is discussed.</dcterms:abstract>
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