Hydrogen passivation of extended defects in multicrystalline silicon solar cells
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Two methods of hydrogen bulk passivation in multicrystalline ingot silicon solar cells were compared. After POCl3-emitter diffusion, four different solar cell types were made out of neighbouring wafers. The first wafer was not hydrogen passivated. The second wafer was passivated by firing of hydrogenated silicon nitride (SiN:H). On the third wafer, a microwave induced remote hydrogen plasma (MIRHP) was applied. The fourth wafer was passivated by both techniques. On all wafers, the recombination activity of dislocations was measured by the correlation of light beam induced current (LBIC) with dislocation density topography. Recombination at grain boundaries was examined using LBIC line scans. The spatial resolution of the measurements was 12.5 μm.
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RINIO, Markus, Martin KAES, Giso HAHN, Dietmar BORCHERT, 2006. Hydrogen passivation of extended defects in multicrystalline silicon solar cells. 21st European Photovoltaic Solar Energy Conference : 21th EC PVSEC. Dresden, Germany, 4. Sept. 2006 - 8. Sept. 2006. In: POORTMANS, Jozef, ed. and others. Twentyfirst European Photovoltaic Solar Energy Conference : Proceedings of the International Conference. Munich: WIP-Renewable Energies, 2006, pp. 684-687. ISBN 978-1-60423-787-0BibTex
@inproceedings{Rinio2006Hydro-42210, year={2006}, title={Hydrogen passivation of extended defects in multicrystalline silicon solar cells}, isbn={978-1-60423-787-0}, publisher={WIP-Renewable Energies}, address={Munich}, booktitle={Twentyfirst European Photovoltaic Solar Energy Conference : Proceedings of the International Conference}, pages={684--687}, editor={Poortmans, Jozef}, author={Rinio, Markus and Kaes, Martin and Hahn, Giso and Borchert, Dietmar}, note={Auf CD-ROM} }
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