Quantum gates between capacitively coupled double quantum dot two-spin qubits

Stepanenko, Dimitrije; Burkard, Guido

Quantum gates between capacitively coupled double quantum dot two-spin qubits

Files

0610377v1.pdf(260.48 KB)

Date

2006

Authors

Stepanenko, Dimitrije

Burkard, Guido

Publication type

Journal article

Published in

Physical Review / B ; 75 (2006). - 85324

Abstract

We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within the qubits. The entangling interaction can be controlled by tuning the bias through the resonance between the singly-occupied and doubly-occupied singlet ground states of a double quantum dot.

Subject (DDC)

530 Physics

Keywords

Quantum dots,Quantum gates,Quantum entanglement,Tunnelling,Ground states,Tuning

Cite This

ISO 690

STEPANENKO, Dimitrije, Guido BURKARD, 2006. Quantum gates between capacitively coupled double quantum dot two-spin qubits. In: Physical Review / B. 75, 85324. Available under: doi: 10.1103/PhysRevB.75.085324

BibTex

@article{Stepanenko2006Quant-9521,
  year={2006},
  doi={10.1103/PhysRevB.75.085324},
  title={Quantum gates between capacitively coupled double quantum dot two-spin qubits},
  volume={75},
  journal={Physical Review / B},
  author={Stepanenko, Dimitrije and Burkard, Guido},
  note={Article Number: 85324}
}

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