Mesoporous Germanium Formation by Electrochemical Etching

Garralaga Rojas, Enrique; Plagwitz, Heiko; Terheiden, Barbara; Hensen, Jan; Baur, C.; La Roche, G.; Strobl, Gerhard F. X.; Brendel, Rolf

Mesoporous Germanium Formation by Electrochemical Etching

Dateien

Zu diesem Dokument gibt es keine Dateien.

Datum

2009

Autor:innen

Garralaga Rojas, Enrique

Plagwitz, Heiko

Terheiden, Barbara

Hensen, Jan

Baur, C.

La Roche, G.

Strobl, Gerhard F. X.

Brendel, Rolf

DOI (zitierfähiger Link)

10.1149/1.3147271

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Erschienen in

Journal of The Electrochemical Society ; 156 (2009), 8. - S. D310-D313. - ISSN 0013-4651. - eISSN 1945-7111

Zusammenfassung

Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the porous layer. The growth rate of the porous Ge layer is therefore given by the difference between the etch rate at the porous layer/substrate wafer interface and the dissolution rate at the electrolyte/porous layer interface. The growth rate lies in the range of 0.071–2.7 nm/min for etching current densities of 0.1–80mA/cm² , while both the etch rate and the dissolution rate lie in the range of several micrometers per minute. We define the substrate usage as the ratio of the growth rate and the etch rate. This substrate usage determines the growth efficiency of the porous layer and lies in the range of 0.2–2%. Thus, the substrate wafer is thinned substantially during anodic porous layer formation. Constantly alternating from an anodic to a cathodic bias prevents the thinning of the substrate. The dissolution rate decreases, and the usage increases up to 98%.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

GARRALAGA ROJAS, Enrique, Heiko PLAGWITZ, Barbara TERHEIDEN, Jan HENSEN, C. BAUR, G. LA ROCHE, Gerhard F. X. STROBL, Rolf BRENDEL, 2009. Mesoporous Germanium Formation by Electrochemical Etching. In: Journal of The Electrochemical Society. 156(8), pp. D310-D313. ISSN 0013-4651. eISSN 1945-7111. Available under: doi: 10.1149/1.3147271

BibTex

@article{GarralagaRojas2009Mesop-31715,
  year={2009},
  doi={10.1149/1.3147271},
  title={Mesoporous Germanium Formation by Electrochemical Etching},
  number={8},
  volume={156},
  issn={0013-4651},
  journal={Journal of The Electrochemical Society},
  pages={D310--D313},
  author={Garralaga Rojas, Enrique and Plagwitz, Heiko and Terheiden, Barbara and Hensen, Jan and Baur, C. and La Roche, G. and Strobl, Gerhard F. X. and Brendel, Rolf}
}

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Universitätsbibliographie

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