Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires

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1998
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Yu, Jun
Zhang, S.
Kent, Andrew D.
Parkin, Stuart S. P.
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Physical Review Letters ; 80 (1998), 25. - pp. 5639-5642
Abstract
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires(0.65 to 20 my m linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature, and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.
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ISO 690RÜDIGER, Ulrich, Jun YU, S. ZHANG, Andrew D. KENT, Stuart S. P. PARKIN, 1998. Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires. In: Physical Review Letters. 80(25), pp. 5639-5642. Available under: doi: 10.1103/PhysRevLett.80.5639
BibTex
@article{Rudiger1998Negat-9198,
  year={1998},
  doi={10.1103/PhysRevLett.80.5639},
  title={Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires},
  number={25},
  volume={80},
  journal={Physical Review Letters},
  pages={5639--5642},
  author={Rüdiger, Ulrich and Yu, Jun and Zhang, S. and Kent, Andrew D. and Parkin, Stuart S. P.}
}
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