Publikation: Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon
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2017
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SMETS, Arno, ed. and others. 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference. München: WIP, 2017, pp. 565-568. ISSN 2196-0992. ISBN 3-936338-47-7. Available under: doi: 10.4229/EUPVSEC20172017-2AV.1.39
Zusammenfassung
The use of different silicon nitride deposition tools is found to change the degree of light induced degradation (LID) of B-doped float-zone silicon after a fast firing step. In addition, a thermally grown SiO2 interlayer further suppresses LID after firing. Possible mechanisms and a potential link to Light and elevated Temperature Induced Degradation (LeTID) are discussed. Furthermore, it is shown that LID is not related to an earlier described class of thermally activated defects in float-zone silicon and that phosphorous gettering does not influence the occurrence of LID in B-doped float-zone silicon significantly.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Light induced degradation, LeTID, Stability, Degradation, Silicon nitride, Minority carrier lifetime
Konferenz
33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017, 25. Sept. 2017 - 29. Sept. 2017, Amsterdam
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ISO 690
SPERBER, David, Axel HERGUTH, Giso HAHN, 2017. Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon. 33rd European Photovoltaic Solar Energy Conference and Exhibition : EU PVSEC 2017. Amsterdam, 25. Sept. 2017 - 29. Sept. 2017. In: SMETS, Arno, ed. and others. 33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference. München: WIP, 2017, pp. 565-568. ISSN 2196-0992. ISBN 3-936338-47-7. Available under: doi: 10.4229/EUPVSEC20172017-2AV.1.39BibTex
@inproceedings{Sperber2017Inves-42289,
year={2017},
doi={10.4229/EUPVSEC20172017-2AV.1.39},
title={Investigating possible causes of light induced degradation in boron-doped Float-Zone silicon},
isbn={3-936338-47-7},
issn={2196-0992},
publisher={WIP},
address={München},
booktitle={33rd European Photovoltaic Solar Energy Conference and Exhibition : proceedings of the international conference},
pages={565--568},
editor={Smets, Arno},
author={Sperber, David and Herguth, Axel and Hahn, Giso}
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