Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers

Lade...
Vorschaubild
Dateien
Moertter_2-8e6ifluflube2.pdf
Moertter_2-8e6ifluflube2.pdfGröße: 831.37 KBDownloads: 146
Datum
2019
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
DOI (zitierfähiger Link)
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 040013. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123840
Zusammenfassung

In this study, the contact formation to a p+-doped emitter created by laser irradiation is investigated. We examine the influence of different firing temperatures and paste compositions on the contact formation on Si substrates after laser treatment of the Si surface. Commercially available AgAl and Ag pastes are screen-printed on the Si wafers. The formed contacts show low contact resistivity ≤2 mΩcm2 for both pastes within the investigated firing temperature ranges. Furthermore, top view investigations of the formed contacts by electron scanning microscopy revealed: for the AgAl containing paste typical AgAl spikes grow into the Si surface; for the Al-free Ag paste small Ag crystallites grow. In addition, a new structure is observed on the contact surface. Using energy dispersive X-ray spectroscopy, Ag as an incorporated part of this structure has been identified. This structure can be considered as an AgSi alloy, covering most of the contact surface. This potentially explains the low contact resistivity values in case of the Ag paste.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr. 2019 - 10. Apr. 2019, Leuven, Belgium
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690MÖRTTER, Matthias Bernd, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2019. Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, 8. Apr. 2019 - 10. Apr. 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York: AIP Publishing, 2019, 040013. AIP Conference Proceedings. 2147,1. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123840
BibTex
@inproceedings{Mortter2019Inves-46843,
  year={2019},
  doi={10.1063/1.5123840},
  title={Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers},
  number={2147,1},
  isbn={978-0-7354-1892-9},
  publisher={AIP Publishing},
  address={Melville, New York},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium},
  editor={Poortmans, Jef},
  author={Mörtter, Matthias Bernd and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 040013}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/46843">
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:issued>2019</dcterms:issued>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-09-12T11:35:46Z</dc:date>
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/46843/1/Moertter_2-8e6ifluflube2.pdf"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/46843"/>
    <dc:rights>terms-of-use</dc:rights>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Mörtter, Matthias Bernd</dc:creator>
    <dcterms:abstract xml:lang="eng">In this study, the contact formation to a p&lt;sup&gt;+&lt;/sup&gt;-doped emitter created by laser irradiation is investigated. We examine the influence of different firing temperatures and paste compositions on the contact formation on Si substrates after laser treatment of the Si surface. Commercially available AgAl and Ag pastes are screen-printed on the Si wafers. The formed contacts show low contact resistivity ≤2 mΩcm&lt;sup&gt;2&lt;/sup&gt; for both pastes within the investigated firing temperature ranges. Furthermore, top view investigations of the formed contacts by electron scanning microscopy revealed: for the AgAl containing paste typical AgAl spikes grow into the Si surface; for the Al-free Ag paste small Ag crystallites grow. In addition, a new structure is observed on the contact surface. Using energy dispersive X-ray spectroscopy, Ag as an incorporated part of this structure has been identified. This structure can be considered as an AgSi alloy, covering most of the contact surface. This potentially explains the low contact resistivity values in case of the Ag paste.</dcterms:abstract>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-09-12T11:35:46Z</dcterms:available>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Mörtter, Matthias Bernd</dc:contributor>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dcterms:title>Investigation of contact resistivity on a laser doped boron emitter from CVD doping layers</dcterms:title>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/46843/1/Moertter_2-8e6ifluflube2.pdf"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen