Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation

Wagner, Hannes; Dastgheib-Shirazi, Amir; Min, Byungsul; Morishige, Ashley E.; Steyer, Michael; Hahn, Giso; del Cañizo, Carlos; Buonassisi, Tonio; Altermatt, Pietro P.

Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation

Dateien

Wagner_2-86z2erkkq8do7.pdfGröße: 1.36 MBDownloads: 336

Datum

2016

Autor:innen

Wagner, Hannes

Dastgheib-Shirazi, Amir

Min, Byungsul

Morishige, Ashley E.

Steyer, Michael

Hahn, Giso

del Cañizo, Carlos

Buonassisi, Tonio

Altermatt, Pietro P.

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Journal of Applied Physics. 2016, 119(18), 185704. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4949326

Zusammenfassung

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl₃ source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N_peak = 8.0 × 10¹⁸ cm⁻³ and a junction depth d_j = 0.4 μm, resulting in a sheet resistivityρsh = 380 Ω/sq and a saturation current-density J₀ below 10 fA/cm². With these properties, the POCl₃ process can compete with ion implantation or doped oxide approaches.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

WAGNER, Hannes, Amir DASTGHEIB-SHIRAZI, Byungsul MIN, Ashley E. MORISHIGE, Michael STEYER, Giso HAHN, Carlos DEL CAÑIZO, Tonio BUONASSISI, Pietro P. ALTERMATT, 2016. Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation. In: Journal of Applied Physics. 2016, 119(18), 185704. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4949326

BibTex

@article{Wagner2016-05-14Optim-35426,
  year={2016},
  doi={10.1063/1.4949326},
  title={Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation},
  number={18},
  volume={119},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Wagner, Hannes and Dastgheib-Shirazi, Amir and Min, Byungsul and Morishige, Ashley E. and Steyer, Michael and Hahn, Giso and del Cañizo, Carlos and Buonassisi, Tonio and Altermatt, Pietro P.},
  note={Article Number: 185704}
}

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