Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation

Wagner, Hannes; Dastgheib-Shirazi, Amir; Min, Byungsul; Morishige, Ashley E.; Steyer, Michael; Hahn, Giso; del Cañizo, Carlos; Buonassisi, Tonio; Altermatt, Pietro P.

Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation

Dateien

Wagner_2-86z2erkkq8do7.pdfGröße: 1.36 MBDownloads: 309

Datum

2016

Autor:innen

Wagner, Hannes

Dastgheib-Shirazi, Amir

Min, Byungsul

Morishige, Ashley E.

Steyer, Michael

Hahn, Giso

del Cañizo, Carlos

Buonassisi, Tonio

Altermatt, Pietro P.

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Journal of Applied Physics. 2016, 119(18), 185704. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4949326

Zusammenfassung

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl₃ source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N_peak = 8.0 × 10¹⁸ cm⁻³ and a junction depth d_j = 0.4 μm, resulting in a sheet resistivityρsh = 380 Ω/sq and a saturation current-density J₀ below 10 fA/cm². With these properties, the POCl₃ process can compete with ion implantation or doped oxide approaches.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

WAGNER, Hannes, Amir DASTGHEIB-SHIRAZI, Byungsul MIN, Ashley E. MORISHIGE, Michael STEYER, Giso HAHN, Carlos DEL CAÑIZO, Tonio BUONASSISI, Pietro P. ALTERMATT, 2016. Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation. In: Journal of Applied Physics. 2016, 119(18), 185704. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4949326

BibTex

@article{Wagner2016-05-14Optim-35426,
  year={2016},
  doi={10.1063/1.4949326},
  title={Optimizing phosphorus diffusion for photovoltaic applications : Peak doping, inactive phosphorus, gettering, and contact formation},
  number={18},
  volume={119},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Wagner, Hannes and Dastgheib-Shirazi, Amir and Min, Byungsul and Morishige, Ashley E. and Steyer, Michael and Hahn, Giso and del Cañizo, Carlos and Buonassisi, Tonio and Altermatt, Pietro P.},
  note={Article Number: 185704}
}

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    <dcterms:abstract xml:lang="eng">The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl&lt;sub&gt;3&lt;/sub&gt; source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density N&lt;sub&gt;peak&lt;/sub&gt; = 8.0 × 10&lt;sup&gt;18&lt;/sup&gt; cm&lt;sup&gt;−3&lt;/sup&gt; and a junction depth d&lt;sub&gt;j&lt;/sub&gt; = 0.4 μm, resulting in a sheet resistivityρsh = 380 Ω/sq and a saturation current-density J&lt;sub&gt;0&lt;/sub&gt; below 10 fA/cm&lt;sup&gt;2&lt;/sup&gt;. With these properties, the POCl&lt;sub&gt;3&lt;/sub&gt; process can compete with ion implantation or doped oxide approaches.</dcterms:abstract>
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