High Speed Regeneration of BO-Defects : Improving Long-Term Solar Cell Performance within Seconds

Lade...
Vorschaubild
Dateien
Wilking_0-261716.pdf
Wilking_0-261716.pdfGröße: 437.35 KBDownloads: 290
Datum
2014
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
ED. BY: T. P. BOKHOVEN ..., , ed.. 29th European PV Solar Energy Conference and Exhibition : proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014. München: WIP, 2014, pp. 366-372. ISBN 3-936338-34-5. Available under: doi: 10.4229/EUPVSEC20142014-2BP.1.2
Zusammenfassung

Boron-oxygen related defects typically limit the efficiency of solar cells made from silicon containing high concentrations of boron as well as oxygen. The detrimental effect of these defects can be eliminated by applying a Regeneration procedure that needs carrier injection at slightly elevated temperatures. The kinetics of this process is influenced by different processing steps like thermal treatment and was found to rely on a high enough hydrogen concentration in the silicon bulk. It is shown here that neither emitter formation nor the use of Al2O3/SiNx:H or SiO2/SiNx:H passivation stacks affect Regeneration in a fundamental way. By contrast, the thickness of a SiNx:H layer acting as hydrogen source during a high temperature firing step has direct influence on Regeneration confirming that better hydrogenation results in faster Regeneration reactions. Condensing different process steps that all accelerate Regeneration allows the application of a high-speed Regeneration process consisting of a combination of relatively high temperature and high carrier injection, resulting in complete Regeneration of BO defects in less than 10 s. This makes Regeneration feasible as an in-line process in solar cell production and thus solves the problem of the boron-oxygen defects. Even further acceleration is achieved by laser induced Regeneration where the substrate is heated and illuminated simultaneously.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Defects, Silicon (Si), Regeneration, Hydrogen, Boron-Oxygen
Konferenz
29th European Photovoltaic Solar Energy Conference and Exhibition, 22. Sept. 2014 - 26. Sept. 2014, Amsterdam
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690WILKING, Svenja, Josh ENGELHARDT, Sebastian EBERT, Cornelius BECKH, Axel HERGUTH, Giso HAHN, 2014. High Speed Regeneration of BO-Defects : Improving Long-Term Solar Cell Performance within Seconds. 29th European Photovoltaic Solar Energy Conference and Exhibition. Amsterdam, 22. Sept. 2014 - 26. Sept. 2014. In: ED. BY: T. P. BOKHOVEN ..., , ed.. 29th European PV Solar Energy Conference and Exhibition : proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014. München: WIP, 2014, pp. 366-372. ISBN 3-936338-34-5. Available under: doi: 10.4229/EUPVSEC20142014-2BP.1.2
BibTex
@inproceedings{Wilking2014Speed-29813,
  year={2014},
  doi={10.4229/EUPVSEC20142014-2BP.1.2},
  title={High Speed Regeneration of BO-Defects : Improving Long-Term Solar Cell Performance within Seconds},
  isbn={3-936338-34-5},
  publisher={WIP},
  address={München},
  booktitle={29th European PV Solar Energy Conference and Exhibition : proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014},
  pages={366--372},
  editor={Ed. by: T. P. Bokhoven ...},
  author={Wilking, Svenja and Engelhardt, Josh and Ebert, Sebastian and Beckh, Cornelius and Herguth, Axel and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/29813">
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Wilking, Svenja</dc:creator>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/29813"/>
    <dc:contributor>Beckh, Cornelius</dc:contributor>
    <dc:language>eng</dc:language>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/29813/3/Wilking_0-261716.pdf"/>
    <dcterms:issued>2014</dcterms:issued>
    <dc:creator>Engelhardt, Josh</dc:creator>
    <dc:creator>Ebert, Sebastian</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Herguth, Axel</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-02-10T11:32:41Z</dc:date>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-02-10T11:32:41Z</dcterms:available>
    <dcterms:abstract xml:lang="eng">Boron-oxygen related defects typically limit the efficiency of solar cells made from silicon containing high concentrations of boron as well as oxygen. The detrimental effect of these defects can be eliminated by applying a Regeneration procedure that needs carrier injection at slightly elevated temperatures. The kinetics of this process is influenced by different processing steps like thermal treatment and was found to rely on a high enough hydrogen concentration in the silicon bulk. It is shown here that neither emitter formation nor the use of Al2O3/SiNx:H or SiO2/SiNx:H passivation stacks affect Regeneration in a fundamental way. By contrast, the thickness of a SiNx:H layer acting as hydrogen source during a high temperature firing step has direct influence on Regeneration confirming that better hydrogenation results in faster Regeneration reactions. Condensing different process steps that all accelerate Regeneration allows the application of a high-speed Regeneration process consisting of a combination of relatively high temperature and high carrier injection, resulting in complete Regeneration of BO defects in less than 10 s. This makes Regeneration feasible as an in-line process in solar cell production and thus solves the problem of the boron-oxygen defects. Even further acceleration is achieved by laser induced Regeneration where the substrate is heated and illuminated simultaneously.</dcterms:abstract>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:creator>Beckh, Cornelius</dc:creator>
    <dc:contributor>Ebert, Sebastian</dc:contributor>
    <dcterms:title>High Speed Regeneration of BO-Defects : Improving Long-Term Solar Cell Performance within Seconds</dcterms:title>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/29813/3/Wilking_0-261716.pdf"/>
    <dc:contributor>Engelhardt, Josh</dc:contributor>
    <dc:contributor>Wilking, Svenja</dc:contributor>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Herguth, Axel</dc:contributor>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen