The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters

Koyasu, Kiichirou; Braun, Christian; Proch, Sebastian; Ganteför, Gerd

The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters

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Datum

2010

Autor:innen

Koyasu, Kiichirou

Braun, Christian

Proch, Sebastian

Ganteför, Gerd

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Applied Physics A. 2010, 100(2), pp. 431-436. ISSN 0947-8396. Available under: doi: 10.1007/s00339-010-5855-1

Zusammenfassung

The lifetimes of electronically excited states of Al4O m − clusters are measured for m=1,3,4,5, and 6 using time-resolved photoelectron spectroscopy. With increasing number of oxygen atoms the lifetimes increase. This can be explained qualitatively by a metal-semiconductor transition occurring between the metal-like Al4 − cluster and the fully oxidized semiconductor-like Al4O6 − cluster. Long lifetimes of electron-hole excitations are characteristic for semiconductors, while in metals the strong interaction between the delocalized electrons causes short lifetimes.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

KOYASU, Kiichirou, Christian BRAUN, Sebastian PROCH, Gerd GANTEFÖR, 2010. The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters. In: Applied Physics A. 2010, 100(2), pp. 431-436. ISSN 0947-8396. Available under: doi: 10.1007/s00339-010-5855-1

BibTex

@article{Koyasu2010metal-12482,
  year={2010},
  doi={10.1007/s00339-010-5855-1},
  title={The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters},
  number={2},
  volume={100},
  issn={0947-8396},
  journal={Applied Physics A},
  pages={431--436},
  author={Koyasu, Kiichirou and Braun, Christian and Proch, Sebastian and Ganteför, Gerd}
}

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Universitätsbibliographie

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