The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters

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2010
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The lifetimes of electronically excited states of Al4O m − clusters are measured for m=1,3,4,5, and 6 using time-resolved photoelectron spectroscopy. With increasing number of oxygen atoms the lifetimes increase. This can be explained qualitatively by a metal-semiconductor transition occurring between the metal-like Al4 − cluster and the fully oxidized semiconductor-like Al4O6 − cluster. Long lifetimes of electron-hole excitations are characteristic for semiconductors, while in metals the strong interaction between the delocalized electrons causes short lifetimes.

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ISO 690KOYASU, Kiichirou, Christian BRAUN, Sebastian PROCH, Gerd GANTEFÖR, 2010. The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters. In: Applied Physics A. 2010, 100(2), pp. 431-436. ISSN 0947-8396. Available under: doi: 10.1007/s00339-010-5855-1
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@article{Koyasu2010metal-12482,
  year={2010},
  doi={10.1007/s00339-010-5855-1},
  title={The metal-semiconductor transition monitored by excited state lifetimes of Al4Om− clusters},
  number={2},
  volume={100},
  issn={0947-8396},
  journal={Applied Physics A},
  pages={431--436},
  author={Koyasu, Kiichirou and Braun, Christian and Proch, Sebastian and Ganteför, Gerd}
}
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