Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors

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Journal of Applied Physics. 2008, 104, 123509. Available under: doi: 10.1063/1.3033140
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The doping profile in different n-doped GaAs homoepitaxial structures grown by molecular beam epitaxy is investigated in the time domain by employing a laser based picosecond ultrasound technique in a contactless and noninvasive way. Experiments based on asynchronous optical sampling employ two femtosecond lasers, which allow us to detect changes in the optical reflectivity over a 1 ns time delay with a signal-to-noise ratio of 107 and 100 fs time resolution in < 1 min of acquisition time. We show that the doping profile with doping densities of the order of 1018 cm−3 can be detected with picosecond ultrasound, although there is no difference in the acoustic properties of the doped and undoped region. The detection mechanism is based on a different sensitivity function for a coherent strain pulse in the doped and undoped regions. These results are corroborated by experiments at room temperature and 10 K.

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ISO 690HUDERT, Florian, Albrecht BARTELS, Thomas DEKORSY, Klaus KÖHLER, 2008. Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors. In: Journal of Applied Physics. 2008, 104, 123509. Available under: doi: 10.1063/1.3033140
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@article{Hudert2008Influ-5360,
  year={2008},
  doi={10.1063/1.3033140},
  title={Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors},
  volume={104},
  journal={Journal of Applied Physics},
  author={Hudert, Florian and Bartels, Albrecht and Dekorsy, Thomas and Köhler, Klaus},
  note={Article Number: 123509}
}
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