@article{Hudert2008Influ-5360,
  year={2008},
  doi={10.1063/1.3033140},
  title={Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors},
  volume={104},
  journal={Journal of Applied Physics},
  author={Hudert, Florian and Bartels, Albrecht and Dekorsy, Thomas and Köhler, Klaus},
  note={Article Number: 123509}
}

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    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dc:creator>Dekorsy, Thomas</dc:creator>
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    <dc:contributor>Hudert, Florian</dc:contributor>
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    <dcterms:abstract xml:lang="deu">The doping profile in different n-doped GaAs homoepitaxial structures grown by molecular beam epitaxy is investigated in the time domain by employing a laser based picosecond ultrasound technique in a contactless and noninvasive way. Experiments based on asynchronous optical sampling employ two femtosecond lasers, which allow us to detect changes in the optical reflectivity over a 1 ns time delay with a signal-to-noise ratio of 107 and 100 fs time resolution in &lt; 1 min of acquisition time. We show that the doping profile with doping densities of the order of 1018 cm−3 can be detected with picosecond ultrasound, although there is no difference in the acoustic properties of the doped and undoped region. The detection mechanism is based on a different sensitivity function for a coherent strain pulse in the doped and undoped regions. These results are corroborated by experiments at room temperature and 10 K.</dcterms:abstract>
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    <dc:creator>Hudert, Florian</dc:creator>
    <dc:creator>Bartels, Albrecht</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:55:14Z</dc:date>
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    <dcterms:title>Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors</dcterms:title>
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    <dc:contributor>Bartels, Albrecht</dc:contributor>
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    <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics 104 (2008), 123509</dcterms:bibliographicCitation>
    <dc:contributor>Köhler, Klaus</dc:contributor>
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