Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness

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2009
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Proceedings of the 24th European Photovoltaic Solar Energy Conference. - Munich, Germany : WIP-Renewable Energies, 2009. - pp. 1596-1599. - ISBN 3-936338-25-6
Abstract
The aim of the work is the comparison of large area Cz-Si solar cells with boron back surface field (B-BSF) to those with full area aluminum (Al) BSF. The investigations are carried out with respect to the influence of the wafer thickness on the cell performance. Boron doped Cz-Si wafers of varying thickness (115-240 μm) are used as bulk material. The B-BSF is formed by BBr3-diffusion. Metallization is applied via screen printing a grid on the front and rear side. Full area aluminum BSF solar cells are used as reference. The solar cells show high open-circuit voltages (VOC) up to 635.4 mV and short-circuit current densities (JSC) up to 36.5 mA/cm2. Neither VOC nor JSC decrease with decreasing wafer thickness. The full area Al-BSF reference solar cells show decreasing fill factors and therefore reduced cell efficiencies with decreasing wafer thickness. The cells with B-BSF reveal internal quantum efficiencies (IQEs) of 60% at 1100 nm. Going to thinner wafers, the IQE is not reduced in the long wavelength regime. The effective back surface recombination velocities (SRVs) extracted from a physical model fitted to spectral response measurements are in the range of 80-200 cm/s for the boron BSF cells. Effective back SRVs of the aluminum BSF cells are determined to 260-700 cm/s.
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530 Physics
Keywords
Boron back surface field,Wafer thickness,Passivation
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24th European Photovoltaic Solar Energy Conference, Sep 21, 2009 - Sep 25, 2009, Hamburg
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Cite This
ISO 690EBERT, Stefanie, Sebastian GLOGER, Bernd RAABE, Giso HAHN, 2009. Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness. 24th European Photovoltaic Solar Energy Conference. Hamburg, Sep 21, 2009 - Sep 25, 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany:WIP-Renewable Energies, pp. 1596-1599. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.2.50
BibTex
@inproceedings{Ebert2009Compa-922,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2CV.2.50},
  title={Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness},
  isbn={3-936338-25-6},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference},
  pages={1596--1599},
  author={Ebert, Stefanie and Gloger, Sebastian and Raabe, Bernd and Hahn, Giso}
}
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