Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness

Lade...
Vorschaubild
Dateien
Riegel_opus-103906.pdf
Riegel_opus-103906.pdfGröße: 168.58 KBDownloads: 97
Datum
2009
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany: WIP-Renewable Energies, 2009, pp. 1596-1599. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.2.50
Zusammenfassung

The aim of the work is the comparison of large area Cz-Si solar cells with boron back surface field (B-BSF) to those with full area aluminum (Al) BSF. The investigations are carried out with respect to the influence of the wafer thickness on the cell performance. Boron doped Cz-Si wafers of varying thickness (115-240 μm) are used as bulk material. The B-BSF is formed by BBr3-diffusion. Metallization is applied via screen printing a grid on the front and rear side. Full area aluminum BSF solar cells are used as reference. The solar cells show high open-circuit voltages (VOC) up to 635.4 mV and short-circuit current densities (JSC) up to 36.5 mA/cm2. Neither VOC nor JSC decrease with decreasing wafer thickness. The full area Al-BSF reference solar cells show decreasing fill factors and therefore reduced cell efficiencies with decreasing wafer thickness. The cells with B-BSF reveal internal quantum efficiencies (IQEs) of 60% at 1100 nm. Going to thinner wafers, the IQE is not reduced in the long wavelength regime. The effective back surface recombination velocities (SRVs) extracted from a physical model fitted to spectral response measurements are in the range of 80-200 cm/s for the boron BSF cells. Effective back SRVs of the aluminum BSF cells are determined to 260-700 cm/s.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Boron back surface field, Wafer thickness, Passivation
Konferenz
24th European Photovoltaic Solar Energy Conference, 21. Sept. 2009 - 25. Sept. 2009, Hamburg
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690EBERT, Stefanie, Sebastian GLOGER, Bernd RAABE, Giso HAHN, 2009. Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness. 24th European Photovoltaic Solar Energy Conference. Hamburg, 21. Sept. 2009 - 25. Sept. 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany: WIP-Renewable Energies, 2009, pp. 1596-1599. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.2.50
BibTex
@inproceedings{Ebert2009Compa-922,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2CV.2.50},
  title={Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness},
  isbn={3-936338-25-6},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference},
  pages={1596--1599},
  author={Ebert, Stefanie and Gloger, Sebastian and Raabe, Bernd and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/922">
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/922/1/Riegel_opus-103906.pdf"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Ebert, Stefanie</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg. München : WIP - Wirtschaft und Infrastruktur, 2009, pp. 1596-1599</dcterms:bibliographicCitation>
    <dcterms:issued>2009</dcterms:issued>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/922"/>
    <dc:contributor>Ebert, Stefanie</dc:contributor>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Raabe, Bernd</dc:creator>
    <dcterms:title>Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness</dcterms:title>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:abstract xml:lang="eng">The aim of the work is the comparison of large area Cz-Si solar cells with boron back surface field (B-BSF) to those with full area aluminum (Al) BSF. The investigations are carried out with respect to the influence of the wafer thickness on the cell performance. Boron doped Cz-Si wafers of varying thickness (115-240 μm) are used as bulk material. The B-BSF is formed by BBr3-diffusion. Metallization is applied via screen printing a grid on the front and rear side. Full area aluminum BSF solar cells are used as reference. The solar cells show high open-circuit voltages (VOC) up to 635.4 mV and short-circuit current densities (JSC) up to 36.5 mA/cm2. Neither VOC nor JSC decrease with decreasing wafer thickness. The full area Al-BSF reference solar cells show decreasing fill factors and therefore reduced cell efficiencies with decreasing wafer thickness. The cells with B-BSF reveal internal quantum efficiencies (IQEs) of 60% at 1100 nm. Going to thinner wafers, the IQE is not reduced in the long wavelength regime. The effective back surface recombination velocities (SRVs) extracted from a physical model fitted to spectral response measurements are in the range of 80-200 cm/s for the boron BSF cells. Effective back SRVs of the aluminum BSF cells are determined to 260-700 cm/s.</dcterms:abstract>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Gloger, Sebastian</dc:creator>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/922/1/Riegel_opus-103906.pdf"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:12Z</dcterms:available>
    <dc:contributor>Raabe, Bernd</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Gloger, Sebastian</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:12Z</dc:date>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen