@inproceedings{Ebert2009Compa-922,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2CV.2.50},
  title={Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness},
  isbn={3-936338-25-6},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference},
  pages={1596--1599},
  author={Ebert, Stefanie and Gloger, Sebastian and Raabe, Bernd and Hahn, Giso}
}

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    <dc:creator>Ebert, Stefanie</dc:creator>
    <dcterms:bibliographicCitation>First publ. in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg. München : WIP - Wirtschaft und Infrastruktur, 2009, pp. 1596-1599</dcterms:bibliographicCitation>
    <dcterms:issued>2009</dcterms:issued>
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    <dc:contributor>Ebert, Stefanie</dc:contributor>
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    <dc:creator>Raabe, Bernd</dc:creator>
    <dcterms:title>Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness</dcterms:title>
    <dc:language>eng</dc:language>
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    <dcterms:abstract xml:lang="eng">The aim of the work is the comparison of large area Cz-Si solar cells with boron back surface field (B-BSF) to those with full area aluminum (Al) BSF. The investigations are carried out with respect to the influence of the wafer thickness on the cell performance. Boron doped Cz-Si wafers of varying thickness (115-240 μm) are used as bulk material. The B-BSF is formed by BBr3-diffusion. Metallization is applied via screen printing a grid on the front and rear side. Full area aluminum BSF solar cells are used as reference. The solar cells show high open-circuit voltages (VOC) up to 635.4 mV and short-circuit current densities (JSC) up to 36.5 mA/cm2. Neither VOC nor JSC decrease with decreasing wafer thickness. The full area Al-BSF reference solar cells show decreasing fill factors and therefore reduced cell efficiencies with decreasing wafer thickness. The cells with B-BSF reveal internal quantum efficiencies (IQEs) of 60% at 1100 nm. Going to thinner wafers, the IQE is not reduced in the long wavelength regime. The effective back surface recombination velocities (SRVs) extracted from a physical model fitted to spectral response measurements are in the range of 80-200 cm/s for the boron BSF cells. Effective back SRVs of the aluminum BSF cells are determined to 260-700 cm/s.</dcterms:abstract>
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    <dc:creator>Gloger, Sebastian</dc:creator>
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    <dc:contributor>Raabe, Bernd</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:contributor>Gloger, Sebastian</dc:contributor>
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